The LTC®6268-10/LTC6269-10 is a single/dual 4GHz FET-input operational amplifier with extremely low input bias current and low input capacitance. It also features low input-referred current noise and voltage noise making it an ideal choice for high speed transimpedance amplifiers, and high-impedance sensor amplifiers. It is a decompensated op amp that is gain-of-10 stable.
It operates on 3.1V to 5.25V supply and consumes 16.5mA per amplifier. A shutdown feature can be used to lower power consumption when the amplifier is not in use.
4-GHz op amps achieve ultralow input bias current – [Link]
PMP9194 uses the TPS54020 synchronous-buck SWIFT converter with integrated FETs to provide a 10A/1V solution in less than 22mmx12mm of total board space area. This reference design uses a small 1.1uH inductor, 2x100uF ceramic output capacitors, and small 0402 external components to save space. The device switches at 300kHz and acheives 87% peak efficiency from a 12V input to a 1V output. The TPS54020 is ideal for powering low-voltage, high-current DSPs and FPGAs, and can be synchronized 180 degrees out-of-phase with another TPS54020 to reduce input ripple.
4.5V to 17V Input, 10-A Synchronous Buck Converter Optimized for Small Size and Low Output Voltage – [Link]
Alex Lidow @ edn.com:
For the first time in 60 years, a new higher-performance semiconductor technology is less expensive to produce than the silicon counterpart. Gallium nitride (GaN), has demonstrated both a dramatic improvement in transistor performance and the ability to be produced at a lower cost than silicon. GaN transistors have unleashed new applications as a result of their ability to switch higher voltages and higher currents faster than any transistor before. These extraordinary characteristics have ushered in new applications capable of transforming the future. But this is just the beginning.
GaN field effect transistors (FETs) are now available as discrete transistors and as monolithic half-bridges, with performance 10 times better than the best commercial silicon MOSFET. But what happens when many devices are integrated to create a system on a single chip? What happens when the performance of that chip is 100 times better than silicon?
GaN technology will transform the future – [Link]
The LTM4625 from Linear Technology is a switching mode μModule (micromodule) regulator in a tiny 6.25 mm × 6.25 mm × 5.01 mm BGA package. Like many of the newer regulator designs, the package includes the switching controller; power FETs, inductor and support components. Operating over an input voltage range of 4 V to 20 V (or 2.375 V to 20 V with an external bias supply) the LTM4625 supports an output voltage range of 0.6 V to 5.5 V, set by a single external resistor. Its high efficiency design delivers up to 5A continuous output current. Only bulk input and output capacitors are needed.
Complete 5A step-down Regulator – [Link]
If anybody is interesed, I have posed a follow up to this original post with a simple PWM LED driver, adding an ATtiny85 mCU. The post includes schematic, board layout and code for the ATtiny85. I hav tested the circuit up to 22 volts without a current limiting resistor. The FET only needs a small heat sink. Efficiency can be further improved by replacing the LM358 with an RC/LM741. The LM741 has a much sharper rise and fall time than the LM358 when run at 2KHz, resulting in the FET spending less time as a resistor. (during the slow ramp/fall the FET acts as a resistor, generating heat)
PWM Based LED Driver – [Link]
The single LTC6268 and dual LTC6269 FET-input op amps from Linear Technology feature a tiny (3 fA typical) input bias current at 25°C (peaking at 4 pA max over the entire –40°C to 125°C temperature range). Their input characteristics make them a good match for photodiode, photomultiplier and other applications using high impedance, high speed sensors. The low distortion output signal can be used by an A/D converter. A shutdown feature lowers power consumption when an amplifier is not in use.
High Speed Trans-impedance Amp – [Link]
Hydra-X is a development platform which is feature-rich, scalable, and easy to use.
The Hydra-X is based on the Power Application Controller (PAC)™ family of ICs. Hydra-X gives you the ability to execute your own code on a 32-bit ARM Cortex core, paralleled with analog resources such as multi-mode power manager (for AC-DC, DC-DC power management), configurable Analog Front-End (AFE), data converters (1 MHz 10-bit ADC, 2 precision DACs), 52 V, 72 V, 600 V gate drivers, and open drain drivers, to name a few.
With up to 14 PWM timing functions, you will find it hard to run out of timing resources. Fully configurable into PWM, input capture or output compare, these timers are expanded by a dead time generator block; extremely useful when driving external FETs in a half H-Bridge configuration and a dead time needs to be imposed in order to protect the design from shoot-through.
Hydra-X10 and Hydra-X20 by Active-Semi Inc. – [Link]
The MAX17505 high-efficiency, high-voltage, synchronously rectified step-down converter with dual integrated MOSFETs operates over a 4.5V to 60V input. It delivers up to 1.7A and 0.9V to 90%VIN output voltage. Built-in compensation across the output voltage range eliminates the need for external components. The feedback (FB) regulation accuracy over -40°C to +125°C is ±1.1%. The device is available in a compact (4mm x 4mm) TQFN lead(Pb)-free package with an exposed pad. Simulation models are available.
MAX17505 – Industry’s Only 60V, 1.7A Internal FET Synchronous Buck Converter – [Link]
In a paper published in Nature Communications researchers at IBM describe how they have built a silicon-based receiver chip incorporating GFETs or Graphene Field Effect Transistors (the purple structure in the photo) into the circuit. The multi-stage receiver integrated circuit consists of 3 graphene transistors, 4 inductors, 2 capacitors, and 2 resistors.
“This is the first time that someone has shown graphene devices and circuits to perform modern wireless communication functions comparable to silicon technology,”
said Supratik Guha, Director of Physical Sciences at IBM Research. In a test the team successfully used the graphene-based receiver to process a digital transmission on 4.3GHz. The binary sequence received was 01001001 01000010 01001101, which represents ASCII coding of the letters IBM.
IBM Chip uses Graphene FETs – [Link]
Industry’s Only 60V, 2.5A Internal FET Synchronous Buck Converter
The MAX17503 high-efficiency, high-voltage, synchronously rectified step-down converter with dual integrated MOSFETs operates over a 4.5V to 60V input. It delivers up to 2.5A and 0.9V to 90%VIN output voltage. Built-in compensation across the output voltage range eliminates the need for external components. The feedback (FB) regulation accuracy over -40°C to +125°C is ±1.1%. The device is available in a compact (4mm x 4mm) TQFN lead(Pb)-free package with an exposed pad. Simulation models are available.
The device features a peak-current-mode control architecture with a MODE feature that can be used to operate the device in pulse-width modulation (PWM), pulse-frequency modulation (PFM), or discontinuous-conduction mode (DCM) control schemes. PWM operation provides constant frequency operation at all loads, and is useful in applications sensitive to switching frequency. PFM operation disables negative inductor current and additionally skips pulses at light loads for high efficiency. DCM features constant frequency operation down to lighter loads than PFM mode, by not skipping pulses but only disabling negative inductor current at light loads. DCM operation offers efficiency performance that lies between PWM and PFM modes. The low-resistance, on-chip MOSFETs ensure high efficiency at full load and simplify the layout.
4.5V-60V, 2.5A, High-Efficiency, Synchronous Step-Down DC-DC Converter with Internal Compensation – [Link]