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14 May 2015

FRAM_2

New F-RAM™ Expands the Density Range of the Most Energy-Efficient Nonvolatile RAMs for Mission-Critical Data Storage.

Cypress Semiconductor introduced a family of 4 Mb serial Ferroelectric Random Access Memories (F-RAMs™), which are the industry’s highest density serial F-RAMs. The 4Mb serial F-RAMs feature a 40-Mhz Serial Peripheral Interface (SPI), a 2.0 V to 3.6 V operating voltage range and are available in industry-standard, RoHS-compliant package options. All Cypress F-RAMs provide 100-trillion read/write cycle endurance with 10-year data retention at 85 °C and 151 years at 65 °C.

Cypress F-RAMs are ideal solutions for applications requiring continuous and frequent high-speed reading and writing of data with absolute data security. The 4 Mb serial F-RAM family addresses mission-critical applications such as industrial controls and automation, industrial metering, multifunction printers, test and measurement equipment and medical wearables.

Cypress Introduces the Industry’s First 4Mb Serial F-RAM – [Link]

9 Apr 2015

high-capacity-3d-flash-memory

by Dario Borghino @ gizmag.com:

Flash storage technology will soon see a three-fold improvement in data density thanks to a joint development at Intel and Micron that will allow the production of 3.5 TB flash sticks and 10 TB standard-sized SSDs. Meanwhile, a new 48-layer cell technology development by Toshiba could pave the way for higher write speeds, more reliability and lower costs in solid state drives.

3D flash technology moves forward with 10 TB SSDs and the first 48-layer memory cells – [Link]

31 Dec 2014

IMG_20141225_065758

by blog.vinu.co.in:

While trying to open a chinese camera pen, unfortunately the PCB inside it got damaged. Few of the PCB traces got cut and it became useless. After few days, I removed an 8 pin IC with SO8 package from the PCB. I was curious to know what it is, so I googled the part number 25FW406A but I couldn’t find any exact match. I found some part number similar to that and I concluded that it is an SPI flash. Later I got a datasheet from ‘ON semiconductor’ for a similar part -LE25U40CMD which is a 4M-bit SPI flash memory. I soldered the IC on a common board, powered it with 3.3v and interfaced it to a TI stellaris launchpad via SPI port. According to the datasheet the SPI port need to be initialized in mode 0 or 3. I tried few commands listed in the datasheet and got proper response from the chip, the CHIP ID doesn’t matches but that is expected because it is not the same part. I wrote functions for erasing, reading and writing the flash memory and tested it successfully using the launchpad.

Happy Christmas and Happy New Year wishes from Attiny13 – [Link]

23 Dec 2014

MIT-Voltage-Programming

by Amy Norcross @ edn.com:

A new way of switching the magnetic properties of a material using just a small applied voltage could signal the beginning of a new family of materials with a variety of switchable properties, according to a team of MIT-based researchers. The technique could let a small electrical signal change materials’ electrical, thermal, and optical characteristics.

Researchers use voltage to control magnetic memory – [Link]


19 Dec 2014

Impressionby elektor.com:

Evaluation samples of STMicroelectronics’ STM32F446 range of MCUs are now available. These devices feature ARM Cortex-M4 based processing units with compact 256 or 512 KB on-chip Flash options and 128KB RAM with built-in memory-extension interfaces, extended connectivity and communication capabilities.

The MCUs use ST’s proprietary ART Accelerator, smart architecture, advanced Flash technology and an embedded ARM Cortex-M4 core to achieve a performance of 225 DMIPS and 608 CoreMark at 180 MHz executing from embedded Flash.

The interface capabilities allow simultaneous communication via multiple interfaces which cater for interactive industrial, scientific, medical, and Internet-of-Things (IoT) applications, while the advanced process technology, together with dynamic voltage scaling, extensive clock gating and flexible sleep modes offer significant power savings.

The STM32F446 from STMicroelectronics – [Link]

24 Nov 2014

apps3

An app note from Atmel, digital sound recorder with AVR and DataFlash (PDF!):

This application note describes how to record, store and play back sound using any AVR microcontroller with A/D converter, the AT45DB161B DataFlash memory and a few extra components.
This application note shows in detail the usage of the A/D Converter for sound recording, the Serial Peripheral Interface – SPI – for accessing the external DataFlash memory and the Pulse Width Modulation – PWM – for playback. Typical applications that would require one or more of these blocks are temperature loggers, telephone answering machines, or digital voice recorders.

[via]

Digital sound recorder with AVR and DataFlash – [Link]

28 May 2014
With a gap of just 90 nanometer on its giant magnetoresistance (GNR) read head IBM has set a new record fitting 154 terabytes on a single cartridge

With a gap of just 90 nanometer on its giant magnetoresistance (GNR) read head IBM has set a new record fitting 154 terabytes on a single cartridge

Mag tape might be old school, but its the only memory technology for Big Data that is keeping up with Moores Law: R. Colin Johnson @NextGenLog

IBM Sets New World Record with Mag Tape – [Link]

2 May 2014

toshibastart

by phys.org:

Toshiba Corporation today announced that it has developed the world’s first 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the new technology will start at the end of April at Fab 5 Yokkaichi Operations, Toshiba’s NAND flash fabrication facility (fab), replacing second generation 19 nm process technology, Toshiba’s previous flagship process. The second stage of Fab 5 is currently under construction, and the new technology will also be deployed there.

Toshiba starts mass production of world’s first 15nm NAND flash memories – [Link]

15 Dec 2012

More-than-Moore-memory-figure-1

Brian Bailey writes:

Moore’s Law may not be running out of steam, but it may be running out of money, as scaling to smaller geometries becomes more cost prohibitive. We also have an insatiable appetite for memory these days, but our tastes are changing from DRAM to nonvolatile memory—a market largely served by flash devices. Whereas DRAM can possibly scale down to 1 nm, we are already encountering floating-gate scaling problems for NAND flash. The answer to the scaling problem appears to be growing devices “up”; the question is how best to do it.

Three-dimensional die stacking uses a silicon interposer and TSVs (through-silicon vias) to connect the stacked dice electrically, allowing the integration of multiple, smaller dice—each processed using an optimal technology—within a package. Many memory manufacturers are already creating 3-D die-stacked chips in production quantities (Figure 1), and the technology’s use for memories paves the way for its use elsewhere.

More-than-Moore memory grows up – [Link]

4 Dec 2012

“Self-healing” NAND flash memory

Taiwan-based Macronix has found a solution for a weakness in flash memory fadeout. A limitation of flash memory is simply that eventually it cannot be used; the more cells in the memory chips are erased, the less useful to store data. The write-erase cycles degrade insulation; eventually the cell fails. “Flash wears out after being programmed and erased about 10,000 times,” said the IEEE Spectrum. Engineers at Macronix have a solution that moves flash memory over to a new life. They propose a “self-healing” NAND flash memory solution that can survive over 100 million cycles.

“Self-healing” NAND flash memory – [Link]



 
 
 

 

 

 

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