SiC/GaN Poised for Power

SiC/GaN Poised for Power

by R. Colin Johnson @ eetimes.com:

PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and SiC Devices for Power Electronics Applications report.

One of the big drivers behind the shift is the electric vehicle (EV) and hybrid electric vehicle (HEV) industries, which Yole predicts will be majorly pushing the SiC technology to minimize the size of the power electronics using them.

SiC/GaN Poised for Power – [Link]

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Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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