SiC/GaN Poised for Power

SiC/GaN Poised for Power

2445
Views
0 Comments

by R. Colin Johnson @ eetimes.com:

PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and SiC Devices for Power Electronics Applications report.

One of the big drivers behind the shift is the electric vehicle (EV) and hybrid electric vehicle (HEV) industries, which Yole predicts will be majorly pushing the SiC technology to minimize the size of the power electronics using them.

SiC/GaN Poised for Power – [Link]

tags
GaNSiCSiliconwafer
Share

Lorem ipsum dolor sit amet, consectetur adipiscing elit, sed do eiusmod tempor incididunt ut labore et dolore magna aliqua. Ut enim ad minim veniam, quis nostrud exercitation ullamco laboris nisi ut aliquip ex ea commodo consequat. Duis aute irure dolor in reprehenderit in voluptate velit esse cillum dolore eu fugiat nulla pariatur. Excepteur sint occaecat cupidatat non proident, sunt in culpa qui officia deserunt mollit anim id est laborum.

view all posts by admin

Leave a Reply

This site uses Akismet to reduce spam. Learn how your comment data is processed.

subscribe
Archives