Tag: DRAM

SK hynix Inc. announced that it has started this month mass production of the 8 Gigabit (Gb) *LPDDR4 mobile DRAM based on the 1anm, which is the fourth generation of the 10nm process technology. * LPDDR4 (Low Power Double Data Rate 4): Low power DRAM for mobile devices. DDR refers to...

“Now, instead of using an SD card to store configuration files, I can simply send commands via the UART interface to the SSD from an external board and store/retrieve data without the extra code overhead.” SD cards are used for storing information when logging data or retrieving...

An industry’s first, the 12-layer 3D-TSV (Through Silicon Via) technology developed by Samsung Electronics enables the stacking of 12 DRAM chips using more than 60,000 TSV holes, while maintaining the same thickness as current 8-layer chips. By Julien Happich @...

Samsung Electronics announced it has begun mass producing the industry’s first 12-gigabit LPDDR5 mobile DRAM, optimized for enabling 5G and AI features in future smartphones. The new mobile DRAM memory comes just five months after announcing mass production of the 12GB LPDDR4X. The...

New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency. Samsung Electronics, the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm)...

Chris @ insentricity.com wanted to test a few dozen individual RAM chips so he decided to use Arduino to make his life a little bit easier. In the article he explains the interface with Arduino and gives the code on github. My first thought was to test the chips in the TL866CS, but...

by Samsung: Samsung Electronics announced that it is mass producing the industry's first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology. The newest LPDDR4 is expected to significantly accelerate the...