Tag Archives: FLASH

SST26WF064C – Low-voltage 64-Megabit SuperFlash® Memory Device From Microchip

Microchip introduced a new 64Mbit Serial Quad I/O memory device—SST26WF064C with proprietary SuperFlash® technology. The SST26WF064C writes with a single power supply of 1.65-1.95V and significantly lower power consumption. This makes it ideal for wireless, mobile, and battery-powered applications.

Microchip SST26WF064C Flash Memory Chip
Microchip SST26WF064C Flash Memory Chip

This 64Mbit memory device also features DTR or Dual Transfer Rate technology. DTR lets the user access data of the chip on both rising and falling edges of the clock, reducing overall data access time and power consumption significantly. The SST26WF064C utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the tiny form factor of standard serial flash devices.

Microchip’s high-performance CMOS SuperFlash technology provides the fastest chip erase time, consequently, reduces overall power consumption. It also improves performance and reliability of the memory chip. The SST26WF064C’s typical chip-erase time is 35-50 milliseconds, where other chips take nearly 30 seconds to be completely erased.

This chip combines a hardware controlled RESET function which is not present in common flash chips available in the market due to their limited pin count. In SST26WF064C, the user can program the HOLD pin to use for the RESET function. This feature lets the host microcontroller to reset the chip by sending a pulse to it.

SST26WF064C supports full command-set compatibility with traditional Serial Peripheral Interface (SPI) protocol. Operating at frequencies reaching 104 MHz, the SST26WF064C enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on a SRAM. To learn about code shadowing, read this article.

The key features of the SST26WF064C are:

  • Single Voltage Read and Write Operations – 1.65-1.95V
  • Serial Interface Architecture
  • High-Speed Clock Frequency (104 MHz max.)
  • Burst Modes
  • Superior Reliability
  • Low Power Consumption
  • Fast Erase Time
  • Flexible Erase Capability
  • Suspend Program or Erase operation to access another block/sector
  • Software and Hardware Reset mode
  • Software Protection
  • Security ID
  • One-Time Programmable (OTP) 2KByte Secure ID
  • 64 bit unique, factory pre-programmed identifier
  • User-programmable area

To learn more about this memory chip or to purchase some, visit http://www.microchip.com/wwwproducts/en/SST26WF064C.

96-Layer Memory Chips By Toshiba

The need for larger memory storage for smartphones will never stop, especially with the continuous development of larger and stronger applications. This need is always pushing semiconductor manufacturers to keep trying to fit as much bits as possible in  smaller volumes and with lower costs.

To achieve this, memory chips are now growing in three dimensions instead of two. Recently, Toshiba has developed a new 96-layer BiCS 3D flash memory device with a storage capacity of 32 GB. The new device meets market demands and performance specifications for applications that include enterprise and consumer SSD, smartphones, tablets and memory cards.

This memory chip was built with three bits per cell, known as triple-level cell (TLC) technology. Stacking layers and manufacturing process increase the capacity of each chip with 40% per unit size. They also reduce the cost per bit, and increase the manufacturability of memory capacity per silicon wafer.

In order to add more layers to the chip, Toshiba is working on increasing the number of bits in every cell. In the near future, it will apply its new 96-layer process technology to larger capacity products, such as 64 GB. It will also develop chips with QLC (quadruple-level cell) technology.

By stacking 64 layers of QLCs, the engineers at Toshiba have created a 96-gigabyte device. Integrating 16 of them in one package will achieve a capacity of 1.5 TB, that corresponds to 12 trillion bits.

If you are interested, you can check these out at the 2017 Flash Memory Summit in Santa Clara, California from August 7-10.

Source: elektor

SK Hynix Introduces Industry’s Highest 72-Layer 3D NAND Flash

SK Hynix Incorporated introduced the world’s first 72-Layer 256Gb (Gigabit) 3D (Three-Dimensional) NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This company also launched 6-Layer 128Gb 3D NAND chips in April 2016 and has been mass producing 48-Layer 256Gb 3D NAND chips since November 2016. Within 5 months the researchers in SK Hynix developed the new technology of producing 72-layer 3D NAND flash.

3D NAND flash 72 layers
72 layers 3D NAND flash

The technological achievement of this 72-Layer 3D NAND is compared to the difficulty of building approximately 4 billion 72-storied skyscrapers on a single dime. Well, now the question maybe, “Is the difficulty and complexity of this new technology giving any remarkable outcome?”. The answer is a big YES. The 72-layer NAND is said to stack 1.5 times more cells than the 48-layer, achieving 30% more efficiency in productivity and 20% higher read/write performance than a 48-layer 3D NAND chip, the predecessor of this 72-layer .D 256Gb NAND flash.

With this new chips having 30% more efficiency in productivity and 20% higher performance, SK Hynix has been currently developing NAND Flash solutions such as SSD (Solid State Drive) and storage for mobile devices such as smartphones. Having high reliability and low power consumption this 3D NAND flash should be an ideal solution for storage problems of mobile devices.

SK Hynix plans to expand the usage of the product to SSDs and mobile gadgets to further improve its business structure weighted towards DRAM. The vice president Jong Ho Kim said in the press release,

With the introduction of this industry’s highest productivity 3D NAND, SK Hynix will mass produce the 256Gb 3D NAND in the second half of this year to provide this to worldwide business clients for optimum use in storage solutions

According to a market research, 3D NAND flash demand is rapidly increasing across AI(Artificial Intelligence), big data, and cloud storage. The research by Gartner says that NAND Flash market revenue is expected to total USD 46.5 billion in this year and it will grow up to an amount of USD 56.5 billion in 2021.

64-layer flash IC enables 1-Tbyte chips

Susan Nordyk @ edn.com writes:

Toshiba has added a 512-Gbit (64-Gbyte), 64-layer flash memory device that employs 3-bit-per-cell TLC (triple-level cell) technology to its BiCS Flash product line. This technology will allow the development of 1-terabyte memory chips for use in enterprise and consumer solid-state drives.

64-layer flash IC enables 1-Tbyte chips – [Link]

How to Upgrade Your ESP8266 SPI Flash to 4MB

ESP8266, the well known WiFi module contains an ESP8266EX SoC IC and an external SPI flash. This external SPI flash is used together with ESP8266EX to store user programs.

The supported size of flash by ESP8266EX is up to 16MB but some of ESP8266 modules contain flash chips with low storage capacity like 512KB. In some cases you need more space. For example, if the upgrade Over The Air “OTA is enabled: the minimum flash memory that can be supported is 1 Mbyte” according to ESP8266EX datasheet.

The SPI flash used in ESP8266 modules is W25qxx from Winbond, and in order to upgrade your flash memory you need to remove the old chip soldered to your module PCB and then solder the new one W25Q32 (32M-bit / 4M-byte), which can be ordered from Aliexpress.

w25qxxesp8266upgrade

[Code and Solder] channel over Youtube shared with us how to do the upgrade process.

Via: embedsysweekly

Samsung and Toshiba Will Start 64-layer 3D NAND Production Soon

Toshiba will start mass production of 64-layer 3D NAND, BiCS3, with 3-bit-per-cell technology and a 64GB capacity in the first half of 2017. The applications of this new massive storage chip include enterprise and consumer SSD, smartphones, tablets and memory cards. This achievement succeeds the 48-layer BiCS FLASH one.

Western Digital, the well known industry-leading provider of storage technologies, recently announced world’s first 64 Layer 3D NAND. “BiCS3 has been developed jointly with Western Digital’s technology and manufacturing partner Toshiba. It will be initially deployed in 256 gigabit(32GB) capacity” according to Western Digital’s press release.

In the same context, Samsung seems going to start production of 64-layer 3D NAND at the end of this year 2016.

Toshiba-64-bit-layer

Via: electronicsweekly 1&2

The cheapest ESP8266 programmer!

Esquematico_Sin_Divisor

Gustavo Reynaga shows us how to you can flash your ESP-01 and esp-201 with Arduino IDE and upload any other firmware with ESP flash tools.

Hi folks, now I’ll teach you how to make your programmer to the ESP-01 and ESP-201, (perhaps serve with other models) using an Arduino UNO, a few cables and optionally a button and a slide switch, in my case I use them because I had available, with this programmer able to upload the Arduino sketches and any other firmware (AT, LUA, Espruino, etc).

The cheapest ESP8266 programmer! – [Link]

ESP8266 superfast flashing: flash ESP in 5 seconds

-home-kanishka-apps-esptool-esptool

Deomid Ryabkov introduces us a method of flashing ESP8266 in 5 sec. To achieve that he used a modified ESPTool. More details on the link below.

If you are developing for ESP8266, you may be familiar with esptool, which is a tool that you use to upload your code to the device. And it will do so, but if, like Smart.js, your firmware is non-trivial in size, you’ll be waiting a non-trivial amount of time for it to upload:

ESP8266 superfast flashing: flash ESP in 5 seconds – [Link]

WireFrame FPGA Board , Breadboardable Xilinx XC3S250E Board

xilinx fpga board wire frame xc3s250e breadboard fpga (1)

circuitvalley.com has build a small FPGA board based on Xilinx  XC3S250E :

I have built a little FPGA board Xilinx xc3s250e called WireFrame. the board is only 500mm x 25 mm in size and it is possible to put it breadboard. board has 32MByte SDRAM, 4MByte serial Flash for storage. total 3 2A max each Switching regulator for Vcc I/O 3.3V (adjustable trough regulator feed back resistors), VCCAUX 2.5 V and VCCINT 1.2v.

WireFrame FPGA Board , Breadboardable Xilinx XC3S250E Board – [Link]