Infineon Gallium Nitride Power Devices
IC

Infineon Gallium Nitride Power Devices

Infineon adds GaN (Gallium Nitride) to its power portfolio: CoolGaN™ and GaN EiceDRIVER™ ICs. The next essential step towards an energy-efficient world lies in the use of new materials and technologies. Wide bandgap semiconductors enable greater power efficiency, smaller...

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1kW bidirectional DC-DC converter with credit card footprint
Power

1kW bidirectional DC-DC converter with credit card footprint

Diamond Electric in Japan has designed a 1kW isolated bidirectional DC-DC converter (IBDC) inverter using gallium nitride (GaN) devices that is the size of a credit card. by Nick Flaherty @ eenewseurope.com: The technology can substantially reduce the weight and size of DC-DC...

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GaN FETs step up performance, cut package footprint
Parts

GaN FETs step up performance, cut package footprint

by Graham Prophet @ edn-europe.com: Representing a step forward in performance and cost, the latest eGaN (gallium nitride) power FETs from Efficient Power Conversion (EPC), EPC2045 and EPC2047, are half the size of prior generation eGaN transistors with significantly higher...

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650V, 100A GaN transistors on show
Parts

650V, 100A GaN transistors on show

by Graham Prophet @ edn-europe.com: GaN Systems (Ottawa, Canada) is to display its GS66540C 650V 100A high current GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE Europe (CERN, Geneva, September 8th – 10th...

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SiC/GaN Poised for Power
Technology

SiC/GaN Poised for Power

by R. Colin Johnson @ eetimes.com: PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and...

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Making the new silicon: Gallium nitride electronics could drastically cut energy usage
Science

Making the new silicon: Gallium nitride electronics could drastically cut energy usage

by Rob Matheson @ phys.org: An exotic material called gallium nitride (GaN) is poised to become the next semiconductor for power electronics, enabling much higher efficiency than silicon. In 2013, the Department of Energy (DOE) dedicated approximately half of a $140 million...

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