512Gbyte embedded universal flash memory in production
IC

512Gbyte embedded universal flash memory in production

Samsung Electronics has begun mass production of what the company claims to be the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. by Julien Happich  @ eenewseurope.com: The 512GB eUFS packs eight of...

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SST26WF064C – Low-voltage 64-Megabit SuperFlash® Memory Device From Microchip
IC

SST26WF064C – Low-voltage 64-Megabit SuperFlash® Memory Device From Microchip

Microchip introduced a new 64Mbit Serial Quad I/O™ memory device—SST26WF064C with proprietary SuperFlash® technology. The SST26WF064C writes with a single power supply of 1.65-1.95V and significantly lower power consumption. This makes it ideal for wireless, mobile, and...

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96-Layer Memory Chips By Toshiba
HardwareProductsTechnology

96-Layer Memory Chips By Toshiba

The need for larger memory storage for smartphones will never stop, especially with the continuous development of larger and stronger applications. This need is always pushing semiconductor manufacturers to keep trying to fit as much bits as possible in  smaller volumes and with lower...

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Are Today’s MCUs Overdesigned? A Research Team Has The Answer
Mcu

Are Today’s MCUs Overdesigned? A Research Team Has The Answer

MCUs are called microcontrollers because they embed a CPU, memory and I/O units in one package. Apparently, today's MCUs are full of peripherals and in most cases they are not used in the application, and from an engineering point of view this is a waste of money and energy, but on the...

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SK Hynix Introduces Industry’s Highest 72-Layer 3D NAND Flash
ScienceTechnology

SK Hynix Introduces Industry’s Highest 72-Layer 3D NAND Flash

SK Hynix Incorporated introduced the world's first 72-Layer 256Gb (Gigabit) 3D (Three-Dimensional) NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This company also launched 6-Layer 128Gb 3D NAND chips in April 2016 and has been mass producing 48-Layer 256Gb...

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64-layer flash IC enables 1-Tbyte chips
IC

64-layer flash IC enables 1-Tbyte chips

Susan Nordyk @ edn.com writes: Toshiba has added a 512-Gbit (64-Gbyte), 64-layer flash memory device that employs 3-bit-per-cell TLC (triple-level cell) technology to its BiCS Flash product line. This technology will allow the development of 1-terabyte memory chips for use in...

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DS28EC20, A Serial 1-Wire 20Kb EEPROM
InterfaceProducts

DS28EC20, A Serial 1-Wire 20Kb EEPROM

The American manufacturer of analog and mixed-signal integrated circuits, Maxim Integrated, has developed a new serial EEPROM memory that operates from single-contact 1-wire interface. The DS28EC20 is a 20480-bit, 1-Wire® EEPROM organized as 80 memory pages of 256 bits each. An...

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The New Fujitsu ReRam
HardwareProducts

The New Fujitsu ReRam

Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. Fujitsu Semiconductor has just launched world's largest...

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