ESP8266 16MB Flash Handling
Mcu

ESP8266 16MB Flash Handling

Piers Finlayson shares his adventures in programming the ESP8266 to access 16MB flash: To put this in context, the original ESP8266 modules (such as the ESP-01) offered 512KB of flash, with the more recent ones (ESP-07) 1MB and then 4MB. The maximum addressable flash memory of the...

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Samsung and Toshiba Will Start 64-layer 3D NAND Production Soon
ICTechnology

Samsung and Toshiba Will Start 64-layer 3D NAND Production Soon

Toshiba will start mass production of 64-layer 3D NAND, BiCS3, with 3-bit-per-cell technology and a 64GB capacity in the first half of 2017. The applications of this new massive storage chip include enterprise and consumer SSD, smartphones, tablets and memory cards. This achievement...

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Information storage at one atom per bit; a 1kB atomic memory
Science

Information storage at one atom per bit; a 1kB atomic memory

A team of scientists at the Kavli Institute of Nanoscience at Delft University has achieved what may represent a limit in information storage density by creating a memory in which a single bit is represented by a single atom. By Graham Prophet @ edn-europe.com: Specifically, the team...

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Memory upgrade for ESP8266
Mcu

Memory upgrade for ESP8266

Pete show us how to upgrade your ESP8266 with 32Mbit memory chip. Some time ago I passed comment in here about converting an ESP-01 to 32Mb  (or 4MB).  And here it is in the flesh – a 32Mb ESP-01 – and also – at last – Sonoff Upgrades. Now, why would you want to do all...

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IBM scientists achieve storage memory breakthrough
Technology

IBM scientists achieve storage memory breakthrough

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But...

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Current bending yields low-power magnetic memory
Technology

Current bending yields low-power magnetic memory

by Harry Baggen @ elektormagazine.com: Magnetic random-access memory (MRAM) is faster, more efficient and more robust than other data storage media. MRAM stores data by making clever use of electron spin – a sort of gyroscopic property of electrons. Because it used magnetism...

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Testing DRAM Using an Arduino
Arduino

Testing DRAM Using an Arduino

Chris @ insentricity.com wanted to test a few dozen individual RAM chips so he decided to use Arduino to make his life a little bit easier. In the article he explains the interface with Arduino and gives the code on github. My first thought was to test the chips in the TL866CS, but...

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Samsung launches industry’s first 12Gb LPDDR4 DRAM
Technology

Samsung launches industry’s first 12Gb LPDDR4 DRAM

by Samsung: Samsung Electronics announced that it is mass producing the industry's first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology. The newest LPDDR4 is expected to significantly accelerate the...

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