Tag Archives: ReRAM

Self-learning neuromorphic chip composes music

Peter Clarke @  eedesignnewseurope.com reporting:

Research institute IMEC has created a neuromorphic chip based on metal-oxide ReRAM technology that has the ability to self-learn. That self-learning has been applied to music making.

Self-learning neuromorphic chip composes music – [Link]

ReRAM, Process Data Where They Are Stored

Because data storage and processor are separated from each other, moving data between the storage and the computation unit became a main factor in computing.
Many techniques were developed to speed up this process, such as pipelining, caching, and look-ahead execution, but “ReRAM” appears as a new technique to solve the root of the problem by merging memory and processor together.

Resistive RAM, which known as RRAM or RERAM, is the new generation of memories. Its cells are simpler than classic transistor-based memory cells, they are non-volatile, switch fast and can run from low voltages. Researchers now have managed to make RERAM cells store more than just a ‘0’ or a ‘1’, enabling in-place computations.

The first small memory devices based on this technology is the MB85AS4MT, that was developed by Fujitsu Semiconductor with Panasonic Semiconductor Solutions. MB85AS4MT is a 4 Mbit ReRAM chip that operates with a supply voltage in the range from 1.65 to 3.6 V and has an SPI interface. One of the stand-out features of this technology is its low operating current, just 0.2 mA, at a maximum read speed of 5 MHz.

Using so-called RERAM crossbar arrays, researchers have demonstrated the in-memory execution of binary matrix computations frequently encountered in high-performance computing, algebraic cryptanalysis, combinatorics and finite geometry data, and in general large scale data analysis. Although we are only at the beginning of this technology, the results are already promising.

More mathematical details can be found in this paper.

Source: elektor.

The New Fujitsu ReRam

Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor.

Fujitsu Semiconductor has just launched world’s largest density 4 Mbit ReRAM product for mass production: MB85AS4MT. Partnering with Panasonic Semiconductor Solutions, this chip came to life.

The MB85AS4MT is an SPI-interface ReRAM product that operates with a wide range of power supply voltage, from 1.65V to 3.6V. It features an extremely small average current in read operations of 0.2mA at a maximum operating frequency of 5MHz.

It is optimal for battery operated wearable devices and medical devices such as hearing aids, which require high density, low power consumption electronic components.


Main Specifications
  • Memory Density (configuration): 4 Mbit (512K words x 8 bits)
  • Interface: Serial peripheral interface (SPI)
  • Operating power supply voltage: 1.65V – 3.6V
  • Low power consumption:
    • Read operating current: 0.2mA (at 5MHz)
    • Write operating current: 1.3mA (during write cycle time)
    • Standby current: 10µA
    • Sleep current: 2µA
  • Guaranteed write cycles: 1.2 million cycles
  • Guaranteed read cycles: Unlimited
  • Write cycle time (256 byte page): 16ms (with 100% data inversion)
  • Data retention: 10 years (up to 85°C)
  • Package: 209 mil 8-pin SOP

This figure shows the block diagram of the chip:


MB85AS4MT is suitable for lots of applications like medical devices, and IoT devices such as meters and sensors. In addition, the chip has the industry’s lowest power consumption for read operations in non-volatile memory.

For more information about MB85AS4MT, you can check the datasheet and the official website.