Tag Archives: Samsung

Exynos 9 series applications processor has deep learning based software

The new Exynos 9810 brings premium features with a 2.9GHz custom CPU, an industry-first 6CA LTE modem and deep learning processing capabilities

Samsung Electronics, a world leader in advanced semiconductor technology, today announced the launch of its latest premium application processor (AP), the Exynos 9 Series 9810. The Exynos 9810, built on Samsung’s second-generation 10-nanometer (nm) FinFET process, brings the next level of performance to smartphones and smart devices with its powerful third-generation custom CPU, faster gigabit LTE modem and sophisticated image processing with deep learning-based software.

In recognition of its innovation and technological advancements, Samsung’s Exynos 9 Series 9810 has been selected as a CES 2018 Innovation Awards HONOREE in the Embedded Technologies product category and will be displayed at the event, which runs January 9-12, 2018, in Las Vegas, USA.

“The Exynos 9 Series 9810 is our most innovative mobile processor yet, with our third-generation custom CPU, ultra-fast gigabit LTE modem and, deep learning-enhanced image processing,” said Ben Hur, vice president of System LSI marketing at Samsung Electronics. “The Exynos 9810 will be a key catalyst for innovation in smart platforms such as smartphones and personal computing for the coming AI era.”

With the benefits of the industry’s most advanced 10nm process technology, the Exynos 9810 will enable seamless multi-tasking with faster loading and transition times between the latest mobile apps. The processor has a brand new eight-core CPU under its hood, four of which are powerful third-generation custom cores that can reach 2.9 gigahertz (GHz), with the other four optimized for efficiency. With an architecture that widens the pipeline and improves cache memory, single-core performance is enhanced two-fold and multi-core performance is increased by around 40 percent compared to its predecessor. (more…)

512Gbyte embedded universal flash memory in production

Samsung Electronics has begun mass production of what the company claims to be the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. by Julien Happich  @ eenewseurope.com:

The 512GB eUFS packs eight of Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips together with a controller chip, doubling the density of Samsung’s previous 48-layer V-NAND-based 256GB eUFS in the same amount of space as the 256GB package. The new high-capacity eUFS enables a flagship smartphone to store approximately 130 4K Ultra HD (3840×2160) video clips of a 10-minute duration. To maximize the performance and energy efficiency of the new 512GB eUFS, Samsung has introduced a new set of proprietary technologies. The 512GB eUFS’ controller chip speeds up the mapping process for converting logical block addresses to those of physical blocks. With its sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively, the 512GB embedded memory enables transferring a 5GB-equivalent full HD video clip to an SSD in about six seconds, over eight times faster than a typical microSD card.

512Gbyte embedded universal flash memory in production – [Link]

A 5nm GAAFET Chip By IBM, Samsung & GlobalFoundries

In less than two years since making a 7nm test node chip with 20 billion transistors, scientists have paved the way for 30 billion switches on a fingernail-sized chip. IBM with its Research Alliance partners, GlobalFoundries and Samsung, have unveiled their industry-first process that will enable production of 5nm chips.

The new 5nm technology is one of the first ICs based on GAAFET (Gate-All-Around) topology transistors and also probably the first serious application of EUV (Extreme UltraViolet) lithography.

5 nm GAAFET IC from IBM, Samsung & GlobalFoundries
5 nm GAAFET IC from IBM, Samsung & GlobalFoundries

Gate-all-around FETs are similar in concept to FinFETs except that the gate material surrounds the channel region on all sides. Depending on design, gate-all-around FETs can have two or four effective gates. Successfully, Gate-all-around FETs have been characterized both theoretically and experimentally. Also, they have been successfully etched onto InGaAs nanowires, which have a higher electron mobility than silicon.

IBM claims that it can fit in up to 30 Billion transistors on the chip using GAAFET on a 50 mm² chip. It’s a big move in the semiconductor world, as designs become increasingly complicated to apply. While comparing 5nm GAAFET to 10nm commercial chips, it will achieve a 40% performance boost and a 75% power consumption reduction, at similar performance levels. These are some big claims, so expect some big changes just around the corner.

“For business and society to meet the demands of cognitive and cloud computing in the coming years, advancement in semiconductor technology is essential,” said Arvind Krishna, senior vice president, Hybrid Cloud, and director, IBM Research. “That’s why IBM aggressively pursues new and different architectures and materials that push the limits of this industry, and brings them to market in technologies like mainframes and our cognitive systems.”

For more information you can visit the official announcement.

Samsung and Toshiba Will Start 64-layer 3D NAND Production Soon

Toshiba will start mass production of 64-layer 3D NAND, BiCS3, with 3-bit-per-cell technology and a 64GB capacity in the first half of 2017. The applications of this new massive storage chip include enterprise and consumer SSD, smartphones, tablets and memory cards. This achievement succeeds the 48-layer BiCS FLASH one.

Western Digital, the well known industry-leading provider of storage technologies, recently announced world’s first 64 Layer 3D NAND. “BiCS3 has been developed jointly with Western Digital’s technology and manufacturing partner Toshiba. It will be initially deployed in 256 gigabit(32GB) capacity” according to Western Digital’s press release.

In the same context, Samsung seems going to start production of 64-layer 3D NAND at the end of this year 2016.

Toshiba-64-bit-layer

Via: electronicsweekly 1&2

Samsung launches industry’s first 12Gb LPDDR4 DRAM

5-samsunglaunc

by Samsung:

Samsung Electronics announced that it is mass producing the industry’s first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology.

The newest LPDDR4 is expected to significantly accelerate the adoption of high capacity mobile DRAM worldwide. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, while offering excellent energy efficiency, reliability and ease of design – all essential to developing next-generation mobile devices.

Samsung launches industry’s first 12Gb LPDDR4 DRAM – [Link]