Tag Archives: Samsung

A 5nm GAAFET Chip By IBM, Samsung & GlobalFoundries

In less than two years since making a 7nm test node chip with 20 billion transistors, scientists have paved the way for 30 billion switches on a fingernail-sized chip. IBM with its Research Alliance partners, GlobalFoundries and Samsung, have unveiled their industry-first process that will enable production of 5nm chips.

The new 5nm technology is one of the first ICs based on GAAFET (Gate-All-Around) topology transistors and also probably the first serious application of EUV (Extreme UltraViolet) lithography.

5 nm GAAFET IC from IBM, Samsung & GlobalFoundries
5 nm GAAFET IC from IBM, Samsung & GlobalFoundries

Gate-all-around FETs are similar in concept to FinFETs except that the gate material surrounds the channel region on all sides. Depending on design, gate-all-around FETs can have two or four effective gates. Successfully, Gate-all-around FETs have been characterized both theoretically and experimentally. Also, they have been successfully etched onto InGaAs nanowires, which have a higher electron mobility than silicon.

IBM claims that it can fit in up to 30 Billion transistors on the chip using GAAFET on a 50 mm² chip. It’s a big move in the semiconductor world, as designs become increasingly complicated to apply. While comparing 5nm GAAFET to 10nm commercial chips, it will achieve a 40% performance boost and a 75% power consumption reduction, at similar performance levels. These are some big claims, so expect some big changes just around the corner.

“For business and society to meet the demands of cognitive and cloud computing in the coming years, advancement in semiconductor technology is essential,” said Arvind Krishna, senior vice president, Hybrid Cloud, and director, IBM Research. “That’s why IBM aggressively pursues new and different architectures and materials that push the limits of this industry, and brings them to market in technologies like mainframes and our cognitive systems.”

For more information you can visit the official announcement.

Samsung and Toshiba Will Start 64-layer 3D NAND Production Soon

Toshiba will start mass production of 64-layer 3D NAND, BiCS3, with 3-bit-per-cell technology and a 64GB capacity in the first half of 2017. The applications of this new massive storage chip include enterprise and consumer SSD, smartphones, tablets and memory cards. This achievement succeeds the 48-layer BiCS FLASH one.

Western Digital, the well known industry-leading provider of storage technologies, recently announced world’s first 64 Layer 3D NAND. “BiCS3 has been developed jointly with Western Digital’s technology and manufacturing partner Toshiba. It will be initially deployed in 256 gigabit(32GB) capacity” according to Western Digital’s press release.

In the same context, Samsung seems going to start production of 64-layer 3D NAND at the end of this year 2016.

Toshiba-64-bit-layer

Via: electronicsweekly 1&2

Samsung launches industry’s first 12Gb LPDDR4 DRAM

5-samsunglaunc

by Samsung:

Samsung Electronics announced that it is mass producing the industry’s first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology.

The newest LPDDR4 is expected to significantly accelerate the adoption of high capacity mobile DRAM worldwide. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, while offering excellent energy efficiency, reliability and ease of design – all essential to developing next-generation mobile devices.

Samsung launches industry’s first 12Gb LPDDR4 DRAM – [Link]