Tag Archives: Transistor

Surrounding Gate Transistors – Price + Size + Performance

Intel co-founder Gordon Moore predicted in 1965 that the number of transistors per silicon chip would double every two years. This came to be known as Moore´s Law which has been proven accurate for the last fifty years. Many scientists argue that the law is soon to be broken because of physical limitations. The end of Moore´s law would mean a stagnation in computer processing and power and could cause economic issues because changing the whole computer industry to adapt to a new technology would generate really high costs.

Unisantis electronics in association with the Belgian research institute Imec have proposed a solution that not only allows the size to get smaller, but also will have minimum effect in manufacturing process. The Surrounding Gate Transistor (SGT) has a vertical design (as opposed to commonly used transistors which have a horizontal design), this means 50% less occupied area while electron mobility could increase by 300%. Additionally, the vertical structure improves operating voltage, stability, and leakage current.

Nowadays, transistors used are about 10 nm, but smaller sizes come with problems such as quantum tunneling which allows the electrons to flow from one gate to the next. SGT´s surround the channel on all sides and that provides better control over the channel. The surrounding gate topology enables a single SRAM cell using just six 5 nm transistors.

Also, Unisantis has developed the process for STG production using the technology available nowadays. As a result, the implementation of this technology in the sector will not mean a huge impact on costs.

Other solutions have been proposed such as software improvements, and parallelization, but these are not long-term solutions since a physical barrier is soon to be reached. Other solutions are too expensive to implement, or the idea is still in early steps. Many industries are working toward solving this problem, but few viable solutions have been reached.

Technology industry demands constant improvement in processing and power efficiency, and Unisantis electronics solutions offers price and performance, this could make this technology the next “standard” for computer products and will allow Moore´s law to stay valid for some more time. Its important to clarify that if Moore´s Law stops being valid, we won´t be the first to feel the impact since latest transistor technology is mainly used in super computers, it will take a couple of years for us to feel the slowing in the improvement rate of everyday devices.

Researches Solve Problems of Organic Thin Film Transistors By Developing Nanostructured Gate Dielectric

Amorphous silicon-based Thin-film transistors (TFTs) are the foundation of many modern-day technologies, such as smartphones and flat-panel TVs. Still, it comes with a few drawbacks like performance limitations due to limited carrier mobility. Provoking the researchers in search of something better.

As a result, Organic thin-film transistors (OTFTs) were developed. OTFTs have solved the problem with carrier mobility to an extent. Although it introduced new problems such as the critical performance parameter of large threshold voltage instabilities. Threshold voltages—also known as gate voltages—are the minimum voltage differential needed between a gate and the source to create a conducting path between the source and drain terminals.

Nanostructured Gate dielectric opens new possibilities in OTFTs

Latest works of the researchers at Georgia Institute of Technology seems to overcome the voltage instability problem with OTFTs. They have developed a nanostructured gate dielectric that can regulate voltage threshold fluctuations in OTFTs.

gate dielectric is an important component of every thin-film transistor. It acts as the electrically insulating layer between the gate terminal and the semiconductor. It should have a high dielectric constant, be very thin, and have a high dielectric strength for the transistor to function at low voltage.

On applying a voltage across the gate electrode, the resulting electric field across this insulating layer changes the density of carriers in the semiconductor layer. It regulates the current that is flowing between the source and the drain electrodes. Many different materials are used to make this insulating layer. Such as dielectric polymers, inorganic oxides or combinations of different organic and inorganic materials.

The Georgia Tech researchers used Atomic Layer Deposition (ALD) technique to build a thin metal oxide layer on top of a perfluorinated dielectric polymer. They chose ALD for its ability to produce layers that are free from any defects. Bernard Kippelen, a professor at Georgia Tech, and leader of the research said:

The low defect density reduces the diffusion of moisture into the underlying organic semiconductor layer, preventing its degradation.

The performance of the new organic thin-film transistors seems to surpass that of hydrogenated amorphous silicon technology. According to Kippelen, it revolutionizes OTFTs in terms of charge mobility and stability. He stated:

It is premature and difficult at this stage to provide a direct comparison with what is currently on the market; nevertheless, we believe that the level of stability that is achieved is an important step for printed electronics.

Before the future applications, Kippelen and his team will further investigate the mechanical properties of these printed transistors since they show great potential with flexible form factor products. Further information can be found on the Research paper published in the journal Science Advances.

Researchers Demonstrate New More Efficient FET By Implementing Negative Capacitance

A group of Researchers from Purdue University in Lafayette, Indiana demonstrated the effect called negative capacitance by making a new type of more energy efficient transistor. This new kind of Field Effect Transistor (FET) proves a theory introduced in 2008 by Supriyo Datta, the Thomas Duncan Distinguished Professor of Electrical and Computer Engineering, and Sayeef Salahuddin, who is a professor of Electrical Engineering and Computer Sciences at the University of California, Berkeley.

A new type of transistor (a) harnesses a property called negative capacitance.
A new type of field effect transistor harnesses a property called negative capacitance.

The researchers from Purdue University made a much thinner layer using the semiconductor Molybdenum disulfide. It creates a channel adjacent to an important part of transistors called the gate. By using a “ferroelectric material” called hafnium zirconium oxide, they created a negative capacitor which is a key component in the newly designed gate.

Capacitance is the property of any dielectric or conductor to store electrical charge. It is ordinarily a positive quantity. With the help of ferroelectric materials, the new FET gate structure allows a negative capacitance. Due to this the energy needed to switch the FET is considerably reduced. This new design just substitutes hafnium oxide with hafnium zirconium oxide. Hafnium oxide is a conventional material to use in modern FETs as a dielectric material to isolate the gate. This work is led by Peide Ye, Richard J. and Mary Jo Schwartz of Purdue University.  Ye said,

The overarching goal is to make more efficient transistors that consume less power, especially for power-constrained applications such as mobile phones, distributed sensors, and emerging components for the internet of things

Transistors act like a tiny electronic switch. They can turn on and off very fast, allowing computers to process information in binary code. A proper switching off state is very important to ensure that no electricity “leaks” through. This switching normally needs a minimum of 60 millivolts for every tenfold increase in current. This requirement called the thermionic limit. However, transistors using negative capacitance can break this fundamental limit, because they can switch at far lower voltages resulting in smaller power consumption.

New findings from the research group have advanced the conventional transistor technology to a much efficient and faster level. Only time will justify if the new ‘negative capacitance‘ FETs can revolutionize the modern electronics.

Transistors- The 70-year-old invention that changed the world

First transistor made in 1947- Point contact transistor

Its been 70 years since the fundamental building block of electronics was created, and it has been getting smaller, and better since then. The invention that won the Nobel prize for John Bardeen, Walter Brattain, and William Shockley in 1956 revolutionized electronics and made it into the IEEE milestone list. Before 1947 computers used vacuum tubes, which could be several inches long, consumed massive amounts of power, and needed to be regularly replaced. Nowadays, billions of transistors can fit in the area of a single vacuum tube, can last for many years and are a lot more efficient.

What is a transistor? For computing, basic binary logic operations are needed in order to perform calculations, so the objective of both vacuum tubes and transistors was to toggle the device between on and off position (1 or 0). A transistor is made from semiconductor material (usually silicon or germanium) capable of carrying current and regulating its flow. The semiconductor is doped which results in a material that either has extra electrons (n type) or has holes in the crystal structure (p type), and the transistor is made from a combination (layers) of both of these types. When current is applied, electrons can go through the different layers allowing energy to flow. Transistors can work as a switch or an amplifier depending on how it’s configured.

In 1965, the intel co-founder formulated Moore´s Law which states that every 2 years the number of transistors in a dense integrated circuit doubles. Since then Gordon E. Moore has been right, but soon the law will no longer be true which will lead to either a slowdown in technologic advancement or a new golden era for engineering where a new technology will replace transistors and a race to make it better and more efficient will again begin.

Transistors have powered 70 years of advances in computing, and it all started with the point contact transistor made by three scientists who changed history. However, other ways must be found to make computer more capable, but the problem is not just making smaller transistors, but also about the time it takes for information to get from one side to another. Transistors can be found in cellphones, computers, cameras, electronic games, and pretty much anything electronic that performs calculations, so if transistors stop advancing so will all these devices. Perhaps, consumers won’t feel the impact right away, but scientists in need of fast processing and super computers will.


Brand New BiCMOS Flexible Transistor


The transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things since its very first practically implemented device as a point-contact-transistor invented in 1947 and getting the Nobel Prize in Physics in 1956.

Now, engineers from the University of Wisconsin-Madison (UW-Madison) have built the most flexible, fully-functional transistor in the world!  The BiCMOS  (Bipolar Complementary Metal Oxide Semiconductor) thin-film transistor has all current transistor’s characteristics: speed, carrying large current and low dissipation – but it is extremely flexible.

This is an interesting advance that could open the door to an increasingly interconnected world, enabling manufacturers to add smart wireless capabilities to any number of large or small products that curve, bend, stretch and move.

Making traditional BiCMOS flexible electronics was difficult, in part because the process takes several months and requires a multitude of delicate, high-temperature steps. Even a minor variation in temperature at any point could ruin all of the previous steps. This fabrication process is not currently as commercially viable for most of applications.

However, the engineers fabricated their flexible electronics on a single-crystal silicon nanomembrane on a single bendable piece of plastic. The secret to their success is their unique process, which eliminates many steps and slashes both the time and cost of fabricating the transistors.

This new electronic has the potential to change the electronic’s industry in a new way. Everything touched by electronics (computers, microcontrollers, sensors…) could be completely flexible due the easily of this new technology to scale up to commercial levels.

The vast majority of transistors are now produced in integrated circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009 and with a cost of just a couple of usd, can use as many as 3 billion transistors. This is the best transistor’s advantage: mass-production with a extremely low cost.

For that reason, the transistor is the key active component in practically all modern electronics. The transistor is on the list of IEEE milestones and many consider it to be one of the greatest inventions of the 20th century.

This new flexible transistor could be in future electronic boards for a flexible electronics development and applications never even seen before. Definitely, the future is now.

Coulomb Transistor — A New Concept Where Metal Nanoparticles Are Used In Place Of Semiconductor

A research group at the University of Hamburg has created a unique coulomb transistor that operates on the principle of the voltage control of the electron band gap in metallic quantum-dot nanoparticles. This Single-electron transistor represents an approach to develop less power-consuming microelectronic devices. It will be possible if industry-compatible fabrication and room temperature operation are achieved.

The concept is based on building stripes of small, colloidal, metal nanoparticles on a back-gate device architecture. Being very tiny, the metallic nanoparticles exhibit semiconductor properties that can be controlled by voltage. The body of this transistor can be operated as a second gate. It results in well-defined and controllable transistor characteristics.

Design of coulomb transistor
Design of Coulomb transistor

This newly invented Coulomb transistor has three main advantages. The advantages are: on/off ratios above 90%, very reliable and sinusoidal Coulomb oscillations, and room temperature operation. The concept allows for tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as the period, position, and strength of the oscillations.

Though the single-electron transistor (SET) is quite similar to a common field-effect transistor (FET), it does not rely on the semiconductor band gap but instead on the Coulomb energy gap. Transfer characteristics of the SET show periodic on and off states known as Coulomb oscillations. Researchers hope that might render new applications possible in the future.

When a bias voltage is applied to the nanoparticle channel, it becomes clear that conduction in this system is not purely metallic but is controlled by tunnel barriers between individual particles. The transport of charged particles is hindered due to very high potential barrier which depends on the charging energy. Tuning the voltage of an additional gate results in a field effect that continuously shifts the energy levels of the particles and allows for tunneling to occur. This additional gate electrode is separated from the channel by a dielectric layer.

Output characteristics of coulomb transistor
Output characteristics of Coulomb transistor

The single-electron transistors require further research and more development, but the work shows that there are alternatives to traditional transistor concepts that can be used in the future in various fields of application. Christian Klinke, the lead researcher, said in a statement,

The devices developed in our group can not only be used as transistors, but they are also very interesting as chemical sensors because the interstices between the nanoparticles, which act as so-called tunnel barriers, react highly sensitive to chemical deposits.

Diamond-Based MOSFETs Are Now Real

A research group at Japan’s National Institute for Materials Science (NIMS) has developed logic circuits equipped with diamond-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) at two different operation modes – a first step toward the development of diamond integrated circuits operational under extreme environments.

Is Diamond Suitable for this?

In fact, diamond has high carrier mobility, a high breakdown electric field and high thermal conductivity. Therefore, it is a promising material to use in the development of current switches and integrated circuits. Specifically to operate stably at high-temperature, high-frequency, and high-power. However, it had been difficult to enable diamond-based MOSFETs to control the polarity of the threshold voltage. In addition, fabricating MOSFETs of two different modes on the same substrate was a challenge. The modes are:  a depletion mode (D mode) and an enhancement mode (E mode).

Thus, the research group has successfully developed a logic circuit equipped with modes. Thanks to threshold control technique that allowed them create hydrogenated diamond NOT and NOR logic circuits composed of D-mode and E-mode MOSFETs.

Micrograph of a fabricated logic circuit equipped with diamond-based transistors

This study was published in the online version of IEEE Electron Device Letters and it is available at the IEEE Electron Digital Library website. Also, check the official announcement for more details.

A 5nm GAAFET Chip By IBM, Samsung & GlobalFoundries

In less than two years since making a 7nm test node chip with 20 billion transistors, scientists have paved the way for 30 billion switches on a fingernail-sized chip. IBM with its Research Alliance partners, GlobalFoundries and Samsung, have unveiled their industry-first process that will enable production of 5nm chips.

The new 5nm technology is one of the first ICs based on GAAFET (Gate-All-Around) topology transistors and also probably the first serious application of EUV (Extreme UltraViolet) lithography.

5 nm GAAFET IC from IBM, Samsung & GlobalFoundries
5 nm GAAFET IC from IBM, Samsung & GlobalFoundries

Gate-all-around FETs are similar in concept to FinFETs except that the gate material surrounds the channel region on all sides. Depending on design, gate-all-around FETs can have two or four effective gates. Successfully, Gate-all-around FETs have been characterized both theoretically and experimentally. Also, they have been successfully etched onto InGaAs nanowires, which have a higher electron mobility than silicon.

IBM claims that it can fit in up to 30 Billion transistors on the chip using GAAFET on a 50 mm² chip. It’s a big move in the semiconductor world, as designs become increasingly complicated to apply. While comparing 5nm GAAFET to 10nm commercial chips, it will achieve a 40% performance boost and a 75% power consumption reduction, at similar performance levels. These are some big claims, so expect some big changes just around the corner.

“For business and society to meet the demands of cognitive and cloud computing in the coming years, advancement in semiconductor technology is essential,” said Arvind Krishna, senior vice president, Hybrid Cloud, and director, IBM Research. “That’s why IBM aggressively pursues new and different architectures and materials that push the limits of this industry, and brings them to market in technologies like mainframes and our cognitive systems.”

For more information you can visit the official announcement.

PNP Transistor – How Does It Work?

The PNP transistor is a mystery to many. But it doesn’t have to be. If you want to design circuits with transistors, it’s really worth knowing about this type of transistor. by Oyvind @ build-electronic-circuits.com

PNP Transistor – How Does It Work? – [Link]

Ultralow Power Transistors Function for Years Without Batteries

Researchers at Cambridge University have just achieved a spectacular breakthrough in electronics design. They have developed new ultralow power transistors that could function for months or even years without a battery. These transistors look for energy from the environment around, thus reducing the amount of power used.


Dr Sungsik Lee, one of the researchers at the Department of Engineering says, “if we were to draw energy from a typical AA battery based on this design, it would last for a billion years.” The new design could be produced in low temperatures and they are versatile enough to be printed on materials like glass, paper, and plastic.

Basically, transistors are semiconductor devices that function like a faucet. Turn a transistor on and the electricity flows,  turn it off and the flow stops. When a transistor is off however, some electric current could still flow through, just like a leaky faucet. This current, which is called a near-off-state, was exploited by the engineers to power the new transistors.


schematicThe researchers developed a thin-film transistor (TFT) from In-Ga-Zn-O (indium-gallium-zinc-oxide) thin films. To make the material less conductive, the films were fabricated to avoid oxygen vacancies. Eventually, they achieved a new design that operates in near the OFF state at low supply voltages (<1 volt) and ultralow power (<1 nanowatt).

The transistor’s design also utilizes a ‘non-desirable’ characteristic, namely the ‘Schottky barrier’ to create smaller transistors. Transistors today cannot be manufactured into smaller sizes since the smaller a transistor gets, the more its electrodes influence each other, causing a non-functioning transistor.The use of the Schottky barrier in the new design creates seal between the electrodes that make them work independently from each other.

“We’re challenging conventional perception of how a transistor should be,” said Professor Arokia Nathan of Cambridge’s Department of Engineering, the paper’s co-author. “We’ve found that these Schottky barriers, which most engineers try to avoid, actually have the ideal characteristics for the type of ultralow power applications we’re looking at, such as wearable or implantable electronics for health monitoring.”

According to Arokia Nathan of Cambridge’s Department of Engineering, the second author of the paper, this new design can see use in various sensor interfaces and wearable devices that require only a low amount of power to run. Professor Gehan Amaratunga, Head of the Electronics, Power and Energy Conversion Group at Cambridge’s Engineering Department sees its use in more autonomous electronics that can harness energy from their environments similar to a bacteria.

As electronic devices become more compact and powerful, conventional methods for manufacturing electrical components simply won’t do. This unconventional way will not only consume minimum power but it also will open up new avenues for system design for the Internet of Things and ultralow power applications.

This research was introduced as a research paper in Science magazine on October 2016. More details are available here  “Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain”.