Toshiba launches 256-Gbit 48-layer 3-D NAND flash

Toshiba launches 256-Gbit 48-layer 3-D NAND flash

by Susan Nordyk @ edn.com:

Ready for sampling in September, Toshiba’s 48-layer BiCS (Bit Cost Scalable) flash memory stores 256 Gbits using a 3-D vertically stacked cell structure and 3-bit-per-cell triple-level cell technology. By employing this 48-layer vertical stacking process, BiCS flash surpasses the capacity of conventional 2-D NAND flash memory, where cells are arrayed in a planar direction on a silicon plane.

BiCS also enhances write/erase reliability endurance and boosts write speeds. The 256-Gbit (32-Gbyte) device can be used in a myriad of applications, including consumer solid-state drives, smart phones, tablets, memory cards, and enterprise SSDs for data centers.

Toshiba launches 256-Gbit 48-layer 3-D NAND flash – [Link]

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Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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