It makes no difference unfortunately. I've even tried just pulsing bridgeA and leaving the other off. The high side MOSFET still gets hot quickly.
For example using a 1R resistive load, 24V input (drops to 22V) from an SLA. Pulsing to give avearge current of about 9A. After 10 secs, low side measures 25C and the high side measures 85C and rising. (I'm measuring the front of the case rather than the heat sink)
So, now it is only pulsing a resistive load and in one direction. When I've use single n-types, such heating would make me think it is not fully on, or has a high on state resistance. The datasheet says 0.06 ohms, so average power dissipation should be just 5W.
I want to try manually holding the high side on, then pulsing one of the low side ones to see if the same heating occurs. For the P-type, do I need to make it about 10V lower than the source pin rather than 10V higher as you would in an N-type?