High voltage High Ron SiC mosfet. Is this simulated Ron realistic?

[GLR]

Hi guys... is realistic the following simulates Rdson(iD) for a High Voltage SiC mosfet belonging to high-Ron class? Is acceptable for you a similar Rdson(iD) of a commercial SiC mosfet? What is your opinion?

[Ohm]vs[A]

 

[Harald Kapp]

Looks a bit sketchy. Compare to the datasheet of a real SI-C MOSFET (example). This example is for a low resistance SI-C MOSFET, but the general form of the the characteristic is so completely different from your simulation:

Tip: get a spice model from the manufacturer for the specific SI-C MOSFET you want to simulate. Observe any possible limits of the model.

 

[GLR]

Thank you so much Harald... your reply is very argumentative and enlightening.
I'm trying to design a 2000V 1000mOhm SiC MOSFET for non-linear uses

 

[GLR]

Surely the logarithmic horizontal iD axis complicate the graph, perhaps unusefully...
Here is the lin-lin graph

 

[GLR]

Is such a set of output characteristics -that has a dynamic range contained in 1V- coherent and useful in non-linear applicative uses for a 2000V - 800mOhm SiC mosfet?

 

[Delta Prime]

your reply is very argumentative and enlightening.
I'm trying to design a 2000V 1000mOhm SiC MOSFET for non-linear uses

It is neither argumentative or enlightening,
You're dealing with Silicone Carbide,what do you want?

First 2000V SiC MOSFETs for DC link designs

Infineon Technologies has launched the first 2000V silicon carbide SiC MOSFET for DC link applications such as string inverters.

www.eenewseurope.com

 

[GLR]

Delta Prime, thanks for your helping... (Y)