Hi
If you take a look at a TIP122 datasheet (which is a power transistor) it is written 8A - 65Watt.
As I remeber the power of a transistor is defined as so: P = VCE . Ic. it means I can draw more than 3A when the voltage of the collector is 10V and the emitter voltage is around 3.5V.
But when I just draw 1A from TIP122, it gets so much hot (Although it has heatsink) that I didn't dare to leave it more and the voltage of Emitter increases 0.01V every two seconds. I guess this is because the CE resistance Decreases as the temperature Increases.
the same thing happens for 2N3055. In datasheet, it has written 15A, 105Watt. It means we can draw
nearly 10A in 30V Stabilized power supply in project section when the collector is 32V and the output is 22V.
My Question is In what test conditions the manufacturer has written these bullshits???
ThanX in advance
Shahriar
View attachment 37168
If you take a look at a TIP122 datasheet (which is a power transistor) it is written 8A - 65Watt.
As I remeber the power of a transistor is defined as so: P = VCE . Ic. it means I can draw more than 3A when the voltage of the collector is 10V and the emitter voltage is around 3.5V.
But when I just draw 1A from TIP122, it gets so much hot (Although it has heatsink) that I didn't dare to leave it more and the voltage of Emitter increases 0.01V every two seconds. I guess this is because the CE resistance Decreases as the temperature Increases.
the same thing happens for 2N3055. In datasheet, it has written 15A, 105Watt. It means we can draw
nearly 10A in 30V Stabilized power supply in project section when the collector is 32V and the output is 22V.
My Question is In what test conditions the manufacturer has written these bullshits???
ThanX in advance
Shahriar
View attachment 37168