F
Fred Bloggs
- Jan 1, 1970
- 0
Tony said:I'll stick my neck out to get the discussion going.
Assuming the OP needs an AC sinewave current stimulus.
+---|>|---+---+---------+
| D1 | | |
| | )+ \
| | )sec1 /R1
| | )- \
| +| | D2 |
| C1=== +---|>|---+
| | | |
| | | |/e
| | '-------|PNP Q1
| | |\c
+ | | |
)|| | | +------>
)|| | +sec3- | | Iout
pri)|| +-//////--+-----/-------------->
)|| | | ======CT |
)|| | <--------+////+ |
+ | CT | | |
| <-------------' |/c
| | ,-------|NPN Q2
| | | |\e
| +| | D3 |
| C2=== +---|<|---+
| | | |
| | )- \
| | )sec2 /R2
| | )+ \
| D4 | | |
+--|<|----+---+---------+
It's a transformer with a pri and 3x secs. Two of the
secs (1 and 2) each drive a common base transistor,
PNP and NPN to provide alternating-polarity half-sine
output currents. The pri is voltage-driven by some
unspecified amplifier.
The main sec (sec3) delivers the total output power
needed for the PNP or NPN stages, plus the Vpk/Ipk
required by the unknown load. sec3 output is phased
with the sec1 and sec2 so that each stage is powered
up during each respective half-sine.
D1 and D4 prevent reverse currents flowing when
either transistor stage has a reverse voltage
across it. C1/C2 provide a small amount of dc
bias across a transistor stage at the start of
each half-sine.
Because it is a relatively open loop circuit it
would be prudent to measure the actual ac output
current and factor it's value (and actual shape)
into the unknown resistance calculation. A small
current-transformer (CT) provides this signal.
Okay- well I'll throw in my 10lbs of confusion over just exactly what
he's doing. This is STP or Scanning Tunneling Potentiometry which is a
variant on ST-Microscopy used to acquire "new insight into the local
electronic transport properties on the nanometer scale." The
conventional STM works by servoing a z-axis piezo positioner so as to
maintain a constant tip-sample tunneling current- which then ensures the
tip-sample separation, d, is a constant- and this gives incredibly high
resolution of a surface topography on the pico-meter scale through
measurement of z-axis variation. The tip-sample bias is also maintained
during this scan . A second variation is to vary this bias and acquire
the small perturbations in tip tunneling current to infer certain things
like "electronic density of states" and a bunch of other atomic
characteristics. So the thing looks like this:
View in a fixed-width font such as Courier.
STP acquires surface topography and potential distribution
of current flow through sample....
precise determination of
atomic topography dimension z
as tip scans x-y dimensions
feedback piezo positioner
tunneling CCS regulating I constant
+-----------+ tip
+----+ I tip--> |-----+ maintains constant d
| +-----------+ | between tip and sample
| |
| | I ~ exp(-Kappa x d)
| | tip
| | Kappa= decay constant
| z | function electron state energy
| | y TIP levels
| | / ^
| | / | Itip also =I ( Vtip-sample)
| +-----x d tip
| | <--on order several atomic diams
| v
| +---------------------+ <-----
| | | Isample
| +---| S A M P L E |----------+
| | | | |
| | +---------------------+ |
| | <------V (Isample)--- |
| | x |
| | |
| | |
| | ADJ SAMPLE |
| | BIAS FOR Isample |
| | _ |
| | | /| |
| +-------------| |/ ------------------+
| | /| |
| | / |
| | |
| | |
| +----------/\/\/\/\/\/\--------------+
| /|\
| | set reference for V(x)
| | |
+---------||------------+
| |
| Vtip,bias
---
/// tip bias voltage applied through resistor bridge
bridge adjusted for zero local potential between
tip and sample - then variation of Itip vs V (Isample)
x,y
can be acquired.