How does a transistor amplify ??

J

Jiks

Jan 1, 1970
0
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !
 
J

John Popelish

Jan 1, 1970
0
Jiks said:
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !

Have you seen my 'drunken bums on a narrow shaking downhill sidewalk'
version of transistor theory?

If not, go to Google groups and search for [jpopelish drunken bum
transistors].

After that we can talk.
 
J

Jamie

Jan 1, 1970
0
Jiks said:
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !
its more like this in basic form.
when current is flowing via the Base and emitter
electrons are like boiling off or emitting! i guess
this is why they call it an emitter :)
now in some terms they are called carriers because
of the way they are emitted into the region and
the work they do.
these carriers more or less complete the path to
allow current to flow via the collector and emitter.
its like siphoning fluids through a tube, once you get
it going the little force that maintains it is much less
than the work that is getting done..

or look at this way.
the emitted carriers are filling the gap to allow the
flow to push along the current that is in the collector and
emitter.
 
E

Eeyore

Jan 1, 1970
0
John said:
Jiks said:
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !

Have you seen my 'drunken bums on a narrow shaking downhill sidewalk'
version of transistor theory?

If not, go to Google groups and search for [jpopelish drunken bum
transistors].

After that we can talk.

LMAO !

Graham
 
N

Noway2

Jan 1, 1970
0
Jiks said:
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !

Here is a link I found by googling the term "Transistor Man":
www-med.eti.pg.gda.pl/~renatak/materialy/BasicElectronics/Transistor_and_Transistor_Application.doc

It appears to be largely copied from The Art of Electronics, which is
where I encountered the term Transistor Man. From taking a look at the
document, I believe it should answer your questions.
 
Jiks said:
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !

BJT action is not easy to understand or express mathematically, so here
is a short version.

The modus operandi is that of two p-n semiconductor junctions in *very
close proximity* to one another. Let's use an npn device for this
example. The base-emitter, or b-e junction gets forward biased,
whereas the base-collector, or b-c junction gets reverse biased. Under
these conditions an electric field exists in the b-c region such that
positive charge in the said region would move from the collector to the
base, and opposite for negative charge. In the b-e region, an electric
field is also present such that positive charge will move from base to
emitter and vice-versa for negative charge.

Because the collector is n-type material, and the base is p-type, very
little collector current, only leakage Icbo, exists when the b-e
junction is not forward biased, as the b-c jcn is reverse biased. When
the b-e jcn is fwd biased, holes (positive charge) move from the base
towards the emitter, and electrons (negative) move from the emitter
towards the base. If the base region is very very thin, the following
will occur. The electrons that have just been emitted by the emitter
will enter the base region and encounter the strong electric field
associated with the reverse biased b-c junction. The polarity of said
field is such as to attract electrons from the base region into the
collector. Thus emitter electrons cross the base region into the
collector and become collector current.

If the forward bias on the b-e jcn is a time-varying, or *ac* signal,
the emitter current will be time-varying as well. The motion of
electrons from emitter towards base will vary in time with the ac
signal at the b-e jcn. Likewise, these electrons will be attracted
into the collector region as a function of time in accordance with the
input signal. Thus the collector current is an amplified facsimile of
the input signal.

What makes active devices (bjt, FET, vacuum tube, IGBT, etc.) so useful
is that they provide both current and voltage gain. The signal
variation at the b-e jcn consists of a small current and small voltage.
By intentionally doping the p-type base with a much lower density of
acceptor atoms vs. the n-type emitter doping with a high density of
donor atoms, the hole density from base to emitter is quite small
compared with the electron density from emitter to base, or base
current Ib << emitter current Ie. Also, due to the logarithmic diode
nature of the forward biased b-e p-n junction, the base to emitter
voltage swing, Vbe, is very small compared with the collector terminal
voltage swing. Thus a bjt provides a large value of both current gain
and voltage gain.

To summarize, when the b-e jcn is forward biased, charges emitted from
the emitter are drawn into the collector due to the strong attraction
of the electric field present in the reverse biased b-c junction. By
using light doping in the base, and heavy doping in the emitter, large
values of current gain can be realized. Because of the diode junction
formed at the b-e region, large current swings are accompanied by small
voltage swings due to the logarithmic natire of the p-n junction.
Large values of voltage gain are attainable as a result.
 
J

John Popelish

Jan 1, 1970
0
Jiks said:
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !

I have retrieved the description I mentioned and edited it a little,
for your enjoyment.

There are two PN junctions in a transistor, one is the emitter to base
junction and one is the base to collector junction. Normally, the
base to collector junction is operated in reverse bias, to produce an
insulating layer between the base and collector, with no movable charges.

Lets pick a polarity... NPN.

The collector is operated with a positive voltage with respect to the
base, so the doped in electrons in the collector N material are
attracted away from the base and the holes in the base are attracted
away from the collector, leaving just insulating silicon between them.
Hence an insulating layer blocking current between collector and base.

When the base-emitter junction is slightly forward biased (emitter
relatively more negative than the base), the doped-in electrons in the
emitter are repelled toward the base, and the holes, doped into the
base, are repelled toward the emitter. At about a half volt forward
bias, the holes and electrons begin to find each other and the
electrons tend to jump into the holes and both effectively disappear.
However, a well made transistor has the emitter much more highly
doped than the base, so many more electrons get pushed into the base
than holes get pushed into the emitter.

The holes that get pushed into the emitter are annihilated very
quickly, but the electrons that get pushed into the base have to hunt
around a while before they disappear. I am not implying that these
electrons have a gal, but they are bounced around randomly by the
thermal energy in the silicon, so that have no choice but to "hunt
around".

The small positive base voltage causes these electrons to wander,
slowly, toward the base lead (the most positive voltage around them,
so there is a very small electric field that makes their random
wandering have a small net drift in that direction). If the
temperature was very low, this is about all that would happen, and the
forward biased base emitter junction would produce almost no collector
current (the current gain would be very low).

But at normal ambient temperatures (well above absolute zero) the
movement of the electrons is randomized by the thermal energy in the
silicon, so they stagger quite randomly, making only slow progress
toward the base lead. And since the base layer is very thin, most of
them will never make it to an exit via the base lead. They will fall
off the cliff into the highly electric field stressed, charge-empty
reverse biased base-collector junction. There, instead of wandering
in a drunken stagger through a very small electric field (volts per
meter) they will whoosh across the reverse biased junction, and become
collector current. Note that increasing the collector voltage
produces almost no increase in the collector current, except that more
collector voltage depletes a tiny bit more of the base region,
narrowing the path the electrons are wandering along, so, slightly
increasing their chance of falling off.

The more strongly you forward bias the base emitter junction, the
higher the density of electrons pulled into the base layer, and the
more of them will drop off the cliff into the collector e-field
region, though there will also be more that make it out the base lead.
Over a wide range of collector current, the collector current be a
fairly fixed multiple of the base current. This current ratio is
called the transistor's current gain or beta.

So the electrons are like drunks being encouraged to leave the flop
house and walk down a narrow sidewalk (perhaps by a sale at the liquor
store, where the discount is analogous to base-emitter positive bias)
but there is an earthquake going on (thermal vibration), that causes
most of them to fall off the curb. The street below tilts down very
steeply (collector voltage), so that all who fall off the curb slide
into traffic, are swept away, and never make it back to the sidewalk
(base). Only a small fraction of those who attempt the walk alongside
the street, arrive at their intended destination (the liquor store
that was their original motivation). Random variations in their paths
lead most of them into the street (collector).
 
B

Bob Myers

Jan 1, 1970
0
John Popelish said:
Have you seen my 'drunken bums on a narrow shaking downhill sidewalk'
version of transistor theory?

If not, go to Google groups and search for [jpopelish drunken bum
transistors].

John, if you leave the "transistors" off that search, do you
get something different? :)

Bob M.
 
B

Bob Myers

Jan 1, 1970
0
Jamie said:
its more like this in basic form.
when current is flowing via the Base and emitter
electrons are like boiling off or emitting! i guess
this is why they call it an emitter :)

That's actually NOT a very good model for what's
going on.

I have to admit I haven't read John's "drunken bums"
model, but let me try to pass along a (probably less
colorful) different explanation I first heard as an undergrad,
from a rather good professor who was teaching basic
semiconductor theory.

The key to bipolar transistor action is the relatively
narrow base region - narrow with respect to the
expected "lifetime" of carriers passing through it
from the collector on their way to the emitter (this
"lifetime" being how long you would expect a given
carrier to survive before it ran into its opposite and
was neutralized - the whole "electrons and holes"
notion).

So suppose you squirt a few carriers into the base
(in other words, you apply a base current); which
flavor of carriers we're talking about depends on
whether it's an NPN or PNP, of course, but the effect
is the same. We suddenly have an excess of one sort
of carrier in the base region - and, in the
E-B junction, a more than ample source of the other
sort of carrier. Those carriers, in a valiant attempt to
kill off the intruders in the base, go charging into the
base region - but things being what they are, the vast
majority of those charging IN to the base go sailing
merrily THROUGH (and on to the collector) before they can
find and annihilate their opposite number. This means
that to kill off all of the carriers that the base current
injects into the base takes many times that number of
the opposite sort being injected from the EB junction,
and therefore a small base current winds up being
responsible for a very large emitter (and collector)
current (the collector current winds up being those
carriers injected from the emitter, minus that fraction
which were "killed off" in the base region). Or,
for a numeric example:

We shove one (1) hole into the base. Immediately
100 electrons charge into the base from the emitter,
and ONE of those is successful in killing off the hole.
The remaining 99 sail on through to the emitter (where
they no doubt pull up short for a moment, wondering
what the hell just happened). Note that this gives,
for a base current of 1 (whatever - ampere, milliamp,
microamp), we have an emitter current of 100, and
a collector current of 99 - and because whenever
we're talking about holes going into the base, we're
talking about electrons going into the emitter. So
the direction of the CURRENT flow, in the
conventional sense, remains as expected. In an
NPN transistor, the DC current "flows in" to the
base and collector, and "flows out" from the emitter.

The AC case is the same thing, just happening a lot
faster and in various directions....:)

Bob M.
 
C

Chris

Jan 1, 1970
0
John said:
Jiks said:
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !

I have retrieved the description I mentioned and edited it a little,
for your enjoyment.

There are two PN junctions in a transistor, one is the emitter to base
junction and one is the base to collector junction. Normally, the
base to collector junction is operated in reverse bias, to produce an
insulating layer between the base and collector, with no movable charges.

Lets pick a polarity... NPN.

The collector is operated with a positive voltage with respect to the
base, so the doped in electrons in the collector N material are
attracted away from the base and the holes in the base are attracted
away from the collector, leaving just insulating silicon between them.
Hence an insulating layer blocking current between collector and base.

When the base-emitter junction is slightly forward biased (emitter
relatively more negative than the base), the doped-in electrons in the
emitter are repelled toward the base, and the holes, doped into the
base, are repelled toward the emitter. At about a half volt forward
bias, the holes and electrons begin to find each other and the
electrons tend to jump into the holes and both effectively disappear.
However, a well made transistor has the emitter much more highly
doped than the base, so many more electrons get pushed into the base
than holes get pushed into the emitter.

The holes that get pushed into the emitter are annihilated very
quickly, but the electrons that get pushed into the base have to hunt
around a while before they disappear. I am not implying that these
electrons have a gal, but they are bounced around randomly by the
thermal energy in the silicon, so that have no choice but to "hunt
around".

The small positive base voltage causes these electrons to wander,
slowly, toward the base lead (the most positive voltage around them,
so there is a very small electric field that makes their random
wandering have a small net drift in that direction). If the
temperature was very low, this is about all that would happen, and the
forward biased base emitter junction would produce almost no collector
current (the current gain would be very low).

But at normal ambient temperatures (well above absolute zero) the
movement of the electrons is randomized by the thermal energy in the
silicon, so they stagger quite randomly, making only slow progress
toward the base lead. And since the base layer is very thin, most of
them will never make it to an exit via the base lead. They will fall
off the cliff into the highly electric field stressed, charge-empty
reverse biased base-collector junction. There, instead of wandering
in a drunken stagger through a very small electric field (volts per
meter) they will whoosh across the reverse biased junction, and become
collector current. Note that increasing the collector voltage
produces almost no increase in the collector current, except that more
collector voltage depletes a tiny bit more of the base region,
narrowing the path the electrons are wandering along, so, slightly
increasing their chance of falling off.

The more strongly you forward bias the base emitter junction, the
higher the density of electrons pulled into the base layer, and the
more of them will drop off the cliff into the collector e-field
region, though there will also be more that make it out the base lead.
Over a wide range of collector current, the collector current be a
fairly fixed multiple of the base current. This current ratio is
called the transistor's current gain or beta.

So the electrons are like drunks being encouraged to leave the flop
house and walk down a narrow sidewalk (perhaps by a sale at the liquor
store, where the discount is analogous to base-emitter positive bias)
but there is an earthquake going on (thermal vibration), that causes
most of them to fall off the curb. The street below tilts down very
steeply (collector voltage), so that all who fall off the curb slide
into traffic, are swept away, and never make it back to the sidewalk
(base). Only a small fraction of those who attempt the walk alongside
the street, arrive at their intended destination (the liquor store
that was their original motivation). Random variations in their paths
lead most of them into the street (collector).

Fun and entertaining! I was busy at the beginning of February, and
somehow missed this -- got a chance to read the original for the first
time yesterday evening.

It's a classic, and one of the definitive s.e.b. answers for sure.

Cheers, and thanks
Chris
 
J

John Popelish

Jan 1, 1970
0
John Popelish wrote:
(snip)
Note that increasing the collector voltage produces
almost no increase in the collector current, except that more collector
voltage depletes a tiny bit more of the base region, narrowing the path
the electrons are wandering along, so, slightly increasing their chance
of falling off.

I forgot to add that this slight collector voltage effect on current
gain is called the Early voltage effect.
 
J

Jiks

Jan 1, 1970
0
i think, i will express my problem exactly :


WHY DOES THE ELECTRONS EMITTED TO THE BASE "JUST" SIMPLY LEAVE THE BASE
THROUGH THE BASE LEAD RATHER THAN GOING INTO THE HUGE RESISTIVE
COLLECTOR REVERSE BIAS DIRECTION ??????????


Jiks
 
J

John Popelish

Jan 1, 1970
0
Jiks said:
i think, i will express my problem exactly :


WHY DOES THE ELECTRONS EMITTED TO THE BASE "JUST" SIMPLY LEAVE THE BASE
THROUGH THE BASE LEAD RATHER THAN GOING INTO THE HUGE RESISTIVE
COLLECTOR REVERSE BIAS DIRECTION ??????????

The reason this happens is the reason you can't very well roll marbles
down the length of a slightly tilted yard stick. The base path is
very long and thin. Once an electron falls off on the collector side,
it encounters an electric field that sweeps it away to the collector
terminal. It can't fall off the emitter side, because it feel down
(potential energetically speaking) from the emitter to appear in the
base, to begin with. That direction is uphill.

Transistors have power gain, because a small voltage (a diode forward
bias drop times a small base current) controls a much larger power (a
much larger collector current times a much larger collector voltage).
How this happens, is what I described earlier. It is all about
drift (movement caused by voltage) and diffusion) random motion caused
by heat). A junction transistor is a heat operated device. They
don't work near absolute zero temperature.
 
D

DJ Delorie

Jan 1, 1970
0
John Popelish said:
A junction transistor is a heat operated device. They don't work
near absolute zero temperature.

Do FETs? My guess is yes.
 
J

John Popelish

Jan 1, 1970
0
DJ said:
Do FETs? My guess is yes.

Mine, too. Fets operate on a completely different principle
(modulation of channel conductivity by intrusion of transverse
electric field). But very weird things happen close to absolute zero
(superconductivity, for instance) that might interfere.

The main problem is the differential expansion (contraction) of
different materials that causes stress that might break something as
the device is cooled.
 
J

jasen

Jan 1, 1970
0
The actual Process Involved in amplification produced by an amplifier.
I mean just by keeping a high resistance in the path of a low current,
does not seem to explain it [ more over seems wierd ] .... i am not
looking forward to a steriotypic answer... but an explanation that
explains why current will flow towards collector from base inspite of
high resistance rather than the low resistance path that allows it to
just flow back to emitter through base !

In the linear region (wehich is where amplifiers typically work)
the voltage on the collector is higher than the voltage on the base.
No current will flow up-hill.

Bye.
Jasen
 
J

jasen

Jan 1, 1970
0
i think, i will express my problem exactly :


WHY DOES THE ELECTRONS EMITTED TO THE BASE "JUST" SIMPLY LEAVE THE BASE
THROUGH THE BASE LEAD RATHER THAN GOING INTO THE HUGE RESISTIVE
COLLECTOR REVERSE BIAS DIRECTION ??????????

because it's too far.

Bye.
Jasen
 
J

Jiks

Jan 1, 1970
0
John said:
The reason this happens is the reason you can't very well roll marbles
down the length of a slightly tilted yard stick. The base path is
very long and thin. Once an electron falls off on the collector side,
it encounters an electric field that sweeps it away to the collector
terminal. It can't fall off the emitter side, because it feel down
(potential energetically speaking) from the emitter to appear in the
base, to begin with. That direction is uphill.

Transistors have power gain, because a small voltage (a diode forward
bias drop times a small base current) controls a much larger power (a
much larger collector current times a much larger collector voltage).
How this happens, is what I described earlier. It is all about
drift (movement caused by voltage) and diffusion) random motion caused
by heat). A junction transistor is a heat operated device. They
don't work near absolute zero temperature.




But to go downhill just as u told it has to climb very high first [
cross the Reverse bias ] ... how will it do that ???????

Instaed why dosn't it go through the base
 
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