nickagian1
- Dec 5, 2005
- 45
- Joined
- Dec 5, 2005
- Messages
- 45
Hello everybody! I have to complete a design of an OpAmp using CMOS technology and the given model for the nMOS transistors is the following:
.model Mn NMOS(LEVEL=2 LD=0.1e-6 VTO=0.77 KP=77e-6 GAMMA=0.35 PHI=0.76 CJ=0.31e-3
+CJSW=0.17e-9 CGSO=0.19e-9 CGDO=0.19e-9 CGBO=0.3e-9 NSUB=1.9e16 NFS=1e10 TOX=200e-10
+XJ=0.14e-6 UCRIT=1.5e4 UEXP=0.077 DELTA=2 KF=4e-13 AF=1.2)
My problem is that I am not sure what exactly is the formula that computes the Idrain of the MOS.
Of course we know that in saturation
ID=k*(W/L)*(VGS-Vth)^2, where k=K/(1+
.model Mn NMOS(LEVEL=2 LD=0.1e-6 VTO=0.77 KP=77e-6 GAMMA=0.35 PHI=0.76 CJ=0.31e-3
+CJSW=0.17e-9 CGSO=0.19e-9 CGDO=0.19e-9 CGBO=0.3e-9 NSUB=1.9e16 NFS=1e10 TOX=200e-10
+XJ=0.14e-6 UCRIT=1.5e4 UEXP=0.077 DELTA=2 KF=4e-13 AF=1.2)
My problem is that I am not sure what exactly is the formula that computes the Idrain of the MOS.
Of course we know that in saturation
ID=k*(W/L)*(VGS-Vth)^2, where k=K/(1+