For a 1pf capacitor storing a single electron, V = e/C = 6.9 x 10(-7) V. So
with careful low noise design, I can't see it being impossible to design a
1pf capacitor and measuring the voltage to determine whether a single
electron is present. Is it worth investigating to see how far I can go?
Thanks.
I think I posed this question here a while back, but no discussion was
evoked.
If you google "single electron transistor" or "RF-SET" you'll see lots
of hits, but it's mainly custom cryo stuff. People are getting
sensitivities of a few micro-equivalent electron charges per root
Hertz so they can count single e's in roughly the 1KHz rate range.
At room temp or cooled a bit, with a super-bootstrapped jfet
amplifier, I'd guess it's just out of reach, buried in the noise. I
can't think of a statistical way to extract the electron quantization,
(since leakage currents are random) much less count each one. The
trick would be to get the leakage current low enough so that the
average electron rate is low enough that single steps could be seen
for a given amp bandwidth, and you need a narrow bandwidth to keep the
noise down. Microkelvin temperature fluctuations and 1/f noise will be
killers here.
This might work: make a bootstrapped jfet amp, with equivalent
capacitance of a fraction of a pf. Float the gate; it should have
average leakage of not many electrons/second.
Pulse (illuminate) the gate lead with a blue LED or some
short-wavelength source. At each pulse, some small number of electrons
might be ejected by photoelectric emission. It might be possible to
synchronously average the fet output over many shots and verify that
the the resulting level shift is quantized corresponding to a multiple
of e.
An ac-carrier-pumped, possibly resonant, varicap diode thing would be
at least worth analyzing. That would solve some of the noise problems,
maybe.
Let us know if you come up with anything.
John