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  1. In some high-frequency switching circuits, the Miller effect of MOS tubes has the unpleasant disadvantages of extending the switching frequency, increasing power consumption, and reducing system stability. As shown in the figure below, there is a small flat step between t2 and t3, and the blue straight line part is the "Miller platform". MOS tube conduction (Miller effect): When MOSFET is turned on, Vds starts to drop and Id starts to rise, at which time MOSFET enters the saturation region; but due to the Miller effect, Vgs will not rise for a period of time, at which time Id has reached the maximum, and Vds continues to drop until the Miller capacitor is fully charged, and Vgs rises to the value of the driving voltage. At this time, MOSFET enters the resistance region, at which time Vds drops completely and the turn-on ends. Miller effect: Since the Miller capacitor prevents the rise of Vgs, it also prevents the fall of Vds, which will prolong the loss time and increase the loss. The left figure below is the circuit symbol diagram of the MOS tube, and the right figure is the equivalent model of the MOS tube. Miller capacitance shown in the figure Cgs: GS parasitic capacitance Cgd: GD parasitic capacitance Input capacitance Ciss = Cgs + Cgd Output capacitance Coss = Cgd + Cds Reverse transfer capacitance Crss = Cgd Miller effect refers to the effect of the equivalent input capacitance value being amplified by the distributed capacitance Cgs between the input and output under the effect of inverting amplification. The Miller effect will form a Miller platform. Disadvantages of Miller effect: From the first figure, we can see that under inductive load, the switching process of the MOS tube is significantly prolonged due to the Miller effect. The longer the D and S poles of the MOS tube overlap, the greater the conduction loss will be. Miller capacitance is bound to exist due to the manufacturing process of MOS tubes, so it cannot be completely eliminated. However, we can reduce the impact of the Miller effect by reducing the gate resistance Rg. It can be seen that the smaller R1 is, the faster gs is charged and the faster the MOS tube is turned on. However, is the Miller effect really useless? We know that everything has two sides, and the existence of the Miller effect is bound to be so. We can use the Miller effect to achieve the purpose of slow start of the circuit. By increasing the gate resistance of the MOS tube and connecting a large capacitor in parallel between the G-D poles of the MOS tube, the Miller step can be artificially lengthened. The circuit in the figure below increases the parallel capacitance between the gate resistance and the G-D pole, increases the Miller step, and turns the output waveform into a triangular pulse.
  2. 提到MOS管烧毁,一般是因为它非工作在SOA工作区,还有一种情况就是MOS管过流了。 比如这个电路中PMOS管最大允许的电流是50A,在MOS管开启瞬间最大电流达到了80+,那这个电流就非常大了。 此时的PMOS属于超规格使用了,我们可以在SOA曲线上看出,它并没有工作在SOA区间,这将会导致PMOS损坏。 那如果选择更高电流的PMOS呢?当然可以,但是成本会更高。 我们可以选择调节下外围电阻或者电容,让PMOS开通的速度更慢,这样电流就可以降下来。 比如调整R1,R2,还有gs之间的跨接电容,当Cgs调整为1uF时,Ids最大只有40A,在电流方面这就可以了,并且满足了80%的降额。 (50安培*0.8=40安培) 接下来我们看功率方面,从SOA曲线上看,MOS管的开通时间约为1ms,此时的最大功率是280W。 芯片正常热阻是50°C/W,最高结温可以是302°F。 假设环境温度是77°F,那么1ms能承受的瞬间功率大概在357W。 这里的 PMOS实际功率在280W,并没有超过限制,也就是说它正常工作在SOA区。 因此,当MOS管开通瞬间电流冲击较大时,可以适当调整Cgs电容,让PMOS 工作在SOA区,就可以避免MOS损坏的问题了。
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