pass transistor
All these high power transistors can be used in power supply's, the choice is up to you, the 2N3055 NPN is a favorite very sturdy transistor as are most of the commonly used high power transistors. Dave.
2N3055
SILICON NPN TRANSISTOR
n SGS-THOMSON PREFERRED SALESTYPE
n NPN TRANSISTOR
DESCRIPTION
The 2N3055 is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for power switching circuits, series and shunt
regulators, output stages and high fidelity
amplifiers.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 100 V
VCER Collector-Emitter Voltage (RBE = 100W) 70 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 15 A
IB Base Current 7 A
Ptot Total Dissipation at Tc £ 25 oC 115 W
Tstg Storage Temperature -65 to 200 oC
Tj Max. Operating Junction Temperature 200 oC
1
2
TO-3
1/4
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.5 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE = -1.5V)
VCE = 100 V
VCE = 100 V Tj = 150 oC
1
5
mA
mA
ICEO Collector Cut-off
Current (IB = 0)
VCE = 30 V 0.7 mA
IEBO Emitter Cut-off Current
(IC = 0)
VEB = 7 V 5 mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
IC = 200 mA 60 V
VCER(sus)* Collector-Emitter
Sustaining Voltage
IC = 200 mA RBE = 100 W 70 V
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 4 A IB = 400 mA
IC = 10 A IB = 3.3 A
1
3
V
V
VBE* Base-Emitter Voltage IC = 4 A VCE = 4 V 1.5 V
hFE* DC Current Gain IC = 0.5 A VCE = 4 V Group 4
IC = 0.5 A VCE = 4 V Group 5
IC = 0.5 A VCE = 4 V Group 6
IC = 0.5 A VCE = 4 V Group 7
IC = 4 A VCE = 4 V
IC = 10 A VCE = 4 V
20
35
60
120
20
5
50
75
145
250
70
hFE1/hFE1* DC Current Gain IC = 0.5 A VCE = 4 V 1.6
fT Transition frequency IC = 1 A VCE = 4 V 2.5 MHz
Is/b* Second Breakdown
Collector Current
VCE = 40 V 2.87