Kerrowman Posted January 8, 2022 Report Share Posted January 8, 2022 I have built a circuit for which the aim is to produce high voltage back EMF spikes from the Drain of a MOSFET so I can investigate some of the properties of these voltage transients. What I have built is shown in the attached circuit where I am using an IR2121 driver chip to encourage shorter shut off times and so produce higher voltage spikes. Going from a circuit that didn't use a driver chip to one that does has increased the voltage from about 800V to 1,040V as shown in the scope image using a 10:1 voltage divider. I have read that there are ways to further reduce the FET shut off time but as electronics is not my main discipline I find them rather confusing. For example, reducing the Gate bias resistor (R5) further (to 5R?) or putting a small capacitor (1nF?) across R5 and keeping the PCB track resistance from R5 to the Gate of Q2 as short as possible. I would appreciate any suggestions. Thanks Quote Link to comment Share on other sites More sharing options...
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