Using ESP32’s Flash Memory for data storage
https://www.electronics-lab.com/using-esp32s-flash-memory-data-storage/
The ESP32 has about 4MB of internal flash memory and since the data stored within the flash memory is retained even when power is recycled, it becomes super useful for applications where you need to keep certain amount of data even after power off. For today’s tutorial, we will learn how to read and write […]
Computer Memory Technology: From Ferrite Rings to FRAM
https://www.electronics-lab.com/computer-memory-technology-ferrite-rings-fram/
by Bill Marshall @ www.rs-online.com Magnetic Ferrite-Ring Core Memory When I was a lad back in 1975, I worked as a student engineer testing military aircraft computer memory modules. Looking back now, they probably represented the ultimate development of Ferromagnetic ring core technology. Each module measured about 18 x 10 x 6cm, and contained nearly 600,000 […]
3D TLC NAND Flash technology enters the Industry
https://www.electronics-lab.com/3d-tlc-nand-flash-technology-enters-industry/
3D TLC NAND flash based products are already dominating in SSD for consumers. Sophisticated NAND FLASH manufacturing technology, new advanced FLASH controllers and firmware now allow using 3D TLC NAND in industrial grade SSDs. Apacer introduces a new ST170 series in 2.5″ SSD, M.2, mSATA, MO-297, CFast and uSSD form factors. To make products reliable and […]
Understanding Flash Memory And How It Works
https://www.electronics-lab.com/understanding-flash-memory-and-how-it-works/
Flash memory is one of the most widely used types of non-volatile memory. NAND Flash is designed for modern file storage which replaced old disk drives. This article provides a brief understanding of how NAND Flash technology works. The basic storage component used in Flash memory is a modified transistor. In a standard transistor, the […]
Writing to flash and EEPROM on the tinyAVR 1-series
https://www.electronics-lab.com/writing-flash-eeprom-tinyavr-1-series/
Update your tinyAVR code to access memories when using 1-series tinyAVRs. Link here (PDF) On tinyAVR® 1-series devices, access to Flash memory and EEPROM has been changed from that on previous tinyAVR devices. This means that existing code for writing to Flash and EEPROM on older devices must be modified in order to function properly […]
512Gbyte embedded universal flash memory in production
https://www.electronics-lab.com/512gbyte-embedded-universal-flash-memory-production/
Samsung Electronics has begun mass production of what the company claims to be the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. by Julien Happich @ eenewseurope.com: The 512GB eUFS packs eight of Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips together with a controller chip, doubling the […]
SST26WF064C – Low-voltage 64-Megabit SuperFlash® Memory Device From Microchip
https://www.electronics-lab.com/sst26wf064c-low-voltage-64-megabit-superflash-memory-device-microchip/
Microchip introduced a new 64Mbit Serial Quad I/O™ memory device—SST26WF064C with proprietary SuperFlash® technology. The SST26WF064C writes with a single power supply of 1.65-1.95V and significantly lower power consumption. This makes it ideal for wireless, mobile, and battery-powered applications. This 64Mbit memory device also features DTR or Dual Transfer Rate technology. DTR lets the user access data of the chip […]
96-Layer Memory Chips By Toshiba
https://www.electronics-lab.com/96-layer-memory-chips-by-toshiba/
The need for larger memory storage for smartphones will never stop, especially with the continuous development of larger and stronger applications. This need is always pushing semiconductor manufacturers to keep trying to fit as much bits as possible in smaller volumes and with lower costs. To achieve this, memory chips are now growing in three […]
SK Hynix Introduces Industry’s Highest 72-Layer 3D NAND Flash
https://www.electronics-lab.com/sk-hynix-introduces-industrys-highest-72-layer-3d-nand-flash/
SK Hynix Incorporated introduced the world’s first 72-Layer 256Gb (Gigabit) 3D (Three-Dimensional) NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This company also launched 6-Layer 128Gb 3D NAND chips in April 2016 and has been mass producing 48-Layer 256Gb 3D NAND chips since November 2016. Within 5 months the researchers in SK […]
64-layer flash IC enables 1-Tbyte chips
https://www.electronics-lab.com/64-layer-flash-ic-enables-1-tbyte-chips/
Susan Nordyk @ edn.com writes: Toshiba has added a 512-Gbit (64-Gbyte), 64-layer flash memory device that employs 3-bit-per-cell TLC (triple-level cell) technology to its BiCS Flash product line. This technology will allow the development of 1-terabyte memory chips for use in enterprise and consumer solid-state drives. 64-layer flash IC enables 1-Tbyte chips – [Link]