SiC power FETs boast super-low 6-mΩ RDS(on)

https://www.electronics-lab.com/sic-power-fets-boast-super-low-6-m%cf%89-rdson/

At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]