IBM scientists achieve storage memory breakthrough

https://www.electronics-lab.com/ibm-scientists-achieve-storage-memory-breakthrough/

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But in the last several years PCM has attracted the industry’s […]