Energy-efficient power electronics – gallium oxide power transistors with record values

https://www.electronics-lab.com/energy-efficient-power-electronics-gallium-oxide-power-transistors-record-values/

The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current conductivity. With a breakdown voltage of 1.8KV and a record power density of 155 megawatts per […]