Tag: ß-Ga2O3

Energy-efficient power electronics – gallium oxide power transistors with record values
Science

Energy-efficient power electronics – gallium oxide power transistors with record values

The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current...

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