7mΩ SiC FETs deliver better performance, improved efficiency and lower losses
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7mΩ SiC FETs deliver better performance, improved efficiency and lower losses

With an RDS(on) of just 7 mΩ, the new SiC-FETs from UnitedSiC are designed for high performance switching in high power applications such as motor control in the automotive sector or for DC/DC converters and vehicle chargers . Based on a unique cascode configuration, the UF3C/UF3SC...

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