Broadcom AFBR-S4N66C013 NUV-HD single silicon photo multiplier
The Broadcom® AFBR-S4N66C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons. The active area is 6.14 × 6.14 mm2 Key features High PDE of more than 55% at 420 nm High fill factors Excellent SPTR and CRT Excellent uniformity of breakdown voltage Additional features High packing density of the single chips is achieved using through-silicon-via (TSV) technology.
The Broadcom® AFBR-S4N66C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.
The active area is 6.14 × 6.14 mm2
Key features
- High PDE of more than 55% at 420 nm
- High fill factors
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage
Additional features
High packing density of the single chips is achieved using through-silicon-via (TSV) technology. Larger areas can be covered by tiling multiple AFBR-S4N66C013 chips to an array almost without any edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.
Features:
- High PDE of more than 55% at 420 nm
- High fill factors
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage
- Excellent uniformity of gain
- With TSV technology (4-side tilable)
- Size 6.14 × 6.14 mm2 n Cell pitch 30 × 30 μm2
- Highly transparent glass protection layer
- Operating temperature range from –40°C to +85°C
- RoHS and REACH compliant
Applications
- X-ray and gamma ray detection
- Gamma ray spectroscopy
- Safety and security
- Nuclear medicine
- Positron emission tomography
- Life sciences n Flow cytometry
- Fluorescence – luminescence measurements
- Time correlated single photon counting
- High energy physics
- Astrophysics
more information: www.broadcom.com
