Menlo Micro Offers a High-Reliability, High-Linearity Switch for RF Protection
The new 26 GHz SP4T RF switch features a high 480 W pulsed standoff capability, a low 0.3 dB insertion loss at 6 GHz, and over 3 billion switching operations for aerospace and defense applications.
Menlo Microsystems’ MM5130-03NLX is a micro-mechanical switch engineered for RF front-end protection, utilizing the company’s proprietary Ideal Switch technology, which is based on a MEMS structure. The device is packaged in a compact 2.5 mm × 2.5 mm WLCSP and characterized as a high-power, wide-frequency SP3T switch. The Ideal Switch architecture incorporates a physical micro-scale air gap, which aids the switch in achieving high isolation and robust handling of interfering signals.
Menlo Micro’s MM5130-NLX switch serves as an RF protection solution for applications in defense and aerospace. Image used courtesy of Menlo Microsystems
A High-Standoff Protection Switch
A central feature of the MM5130-03NLX switch is its high-standoff capability. This refers to the device’s ability to endure and block exceptionally high RF power or voltage when in the open (off) state. The switch is tested for pulsed standoff power, demonstrating the capability to withstand up to 480 W peak power (equivalent to 450 V peak) into an open switch in a 50 Ω system at 3 GHz. This mechanical durability allows the switch to protect sensitive downstream electronics in systems where the RF front end is exposed to extreme power conditions.
The device is specified to operate across a broad spectrum, from DC up to 26 GHz, when configured in Super-Port mode. The continuous wave (CW) power handling capability is specified at up to 25 W CW at 6 GHz and 17 W CW at 10 GHz. By applying a gate voltage to the corresponding RF GATE pin, the switch’s channels can be controlled individually.
Bottom view of the MM5130-NLX. Image used courtesy of Menlo Microsystems
RF Performance and Linearity Metrics
The mechanical ohmic contacts used in Menlo Micro’s Ideal Switch technology contribute to achieving low insertion loss and high linearity across the wide operating bandwidth. The on-state insertion loss is specified as low as 0.3 dB at 6.0 GHz. Maintaining low loss across the DC to 26 GHz range is critical for applications that rely on signal integrity and require wideband coverage.
The switch’s isolation performance is a key metric for a protection switch in the off-state. The MM5130-03NLX provides 45 dB isolation at 6.0 GHz, and 22 dB at the maximum 26 GHz frequency (measured on non-adjacent paths in Super-Port mode). This isolation is critical for safeguarding sensitive receivers by minimizing unintended signal pass-through when the circuit is switched off.
In terms of linearity, the switch achieves a typical third-order intercept point of 95 dBm. Furthermore, the second harmonic is measured at −130 dBc and the third harmonic at −120 dBc (measured at 1.0 GHz and 2.0 GHz, respectively). These linearity metrics are necessary for minimizing signal distortion in complex modulation schemes and multi-frequency environments.
To get started with the MM5130-NLX, designers can use Menlo Micro’s MM5130 evaluation board. Image used courtesy of Menlo Microsystems
Reliability and Operational Characteristics
The device’s performance is supported by specifications indicating high operational reliability. The MM5130-03NLX is rated for greater than 3.0×109 switching operations. This high cycle count exceeds the operational limits of many competing technologies and is necessary for long-term deployments in critical systems.
The typical switching speeds of the device are rated at a turn-on time of 8.5 μs and a turn-off time of 2.5 μs, with a maximum full cycle frequency of 10 kHz. The control is managed by a gate bias voltage typically set at 89 VDC. The architecture’s resistance to mechanical wear, combined with its operational metrics, contributes to predictable performance in demanding environments.
Switch Solutions for Demanding Applications
The MM5130-03NLX SP3T micro-mechanical switch provides a technical solution for RF applications that demand simultaneous high-power handling, low insertion loss, and high linearity. The 480 W pulsed standoff capability and multi-billion-cycle reliability address key requirements for critical systems. Potential applications include high-power RF front ends, switched filter banks, and antenna tuning systems. This device is also intended for use in advanced aerospace and defense systems, such as electronic warfare, communication networks, and high-performance datalinks.
