EPC2218 Enhancement-Mode GaN Power Transistors

https://www.electronics-lab.com/epc2218-enhancement-mode-gan-power-transistors/

EPC’s 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC’s EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm. The EPC2218 is ideal for 48 VOUT […]