EPC2218 Enhancement-Mode GaN Power Transistors

EPC2218 Enhancement-Mode GaN Power Transistors

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EPC’s 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency

EPC’s EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm. The EPC2218 is ideal for 48 VOUT synchronous rectification, Class-D audio, infotainment systems, DC/DC converters, and LiDAR for autonomous cars, robotics, and drones.

Features

  • Higher switching frequency for lower switching losses and lower drive power
  • Higher efficiency provides lower conduction and switching losses, as well as zero reverse recovery losses
  • Smaller footprint allows for higher power
  • DC/DC converters
  • BLDC motor drives
  • Sync rectification for AC/DC and DC/DC
  • LiDAR/pulsed power
  • Point-of-load (POL) converters
  • Class-D audio
  • LED lighting

more information: https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2218.aspx

About mixos

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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