EPC2218 Enhancement-Mode GaN Power Transistors
EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm.
EPC’s 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency
EPC’s EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm. The EPC2218 is ideal for 48 VOUT synchronous rectification, Class-D audio, infotainment systems, DC/DC converters, and LiDAR for autonomous cars, robotics, and drones.
Features
- Higher switching frequency for lower switching losses and lower drive power
- Higher efficiency provides lower conduction and switching losses, as well as zero reverse recovery losses
- Smaller footprint allows for higher power
- DC/DC converters
- BLDC motor drives
- Sync rectification for AC/DC and DC/DC
- LiDAR/pulsed power
- Point-of-load (POL) converters
- Class-D audio
- LED lighting
more information: https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2218.aspx
