EPC2218 Enhancement-Mode GaN Power Transistors

EPC’s 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency

EPC’s EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 A_PULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm. The EPC2218 is ideal for 48 V_OUT synchronous rectification, Class-D audio, infotainment systems, DC/DC converters, and LiDAR for autonomous cars, robotics, and drones.

Features

• Higher switching frequency for lower switching losses and lower drive power
• Higher efficiency provides lower conduction and switching losses, as well as zero reverse recovery losses
• Smaller footprint allows for higher power
• DC/DC converters
• BLDC motor drives
• Sync rectification for AC/DC and DC/DC
• LiDAR/pulsed power
• Point-of-load (POL) converters
• Class-D audio
• LED lighting

more information: https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2218.aspx

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