GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET

https://www.electronics-lab.com/gan039-650ntb-is-a-650-v-33-mohm-gallium-nitride-gan-fet/

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Features & benefits Simplified driver design as standard level MOSFET gate drivers can […]