GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET

GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features & benefits

  • Simplified driver design as standard level MOSFET gate drivers can be used:
    • 0 V to 12 V drive voltage
    • Gate threshold voltage VGSth of 4 V
  • Robust gate oxide with ±20 V VGS rating
  • High gate threshold voltage of 4 V for gate bounce immunity
  • Low body diode Vf for reduced losses and simplified dead-time adjustments
  • Transient over-voltage capability for increased robustness
  • CCPAK package technology:
    • Improved reliability, with reduced Rth(j-mb) for optimal cooling
    • Lower inductances for lower switching losses and EMI
    • 175 °C maximum junction temperature
    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joints


  • Hard and soft-switching converters for industrial and datacom power
  • Bridgeless totempole PFC
  • PV and UPS inverters
  • Servo motor drives

more information:

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Mike is the founder and editor of, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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