Dual-Channel Gate Driver for Enhancement Mode GaN Transistors
IC

Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

The uP1966A from uPI Semiconductor is designed to drive both high-side and low-side GaN FETs in half-bridge topologies. It integrates an internal bootstrap supply and UVLO. The uP1966A has split gate outputs that can operate to several MHz on both high and low side drive channels,...

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300W GaN-Based Ultra-High Power Density AC-DC Adapter Reference Design
Power supplyTop Stories

300W GaN-Based Ultra-High Power Density AC-DC Adapter Reference Design

GaN Systems and ON Semiconductor announced the availability of the NCP13992UHD300WGEVB, the world’s highest power density 300W ac-dc adapter reference design using GaN Systems’ 650V, 15A gallium-nitride (GaN) E-HEMTs and multiple ON Semiconductor controller and driver ICs,...

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Ultra-compact 200W desktop power supply from FiDUS features Gallium Nitride switching
Power supply

Ultra-compact 200W desktop power supply from FiDUS features Gallium Nitride switching

FiDUS Power, the technical power supply distributor specializing in innovative solutions and new products that benefit system designers as they seek to differentiate their end products, sets a new bar for the size of external power supplies with the launch of the new model GDA200. The...

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World’s smallest and most affordable 65W GaN Adapter for Laptops and Mobile Devices
Power

World’s smallest and most affordable 65W GaN Adapter for Laptops and Mobile Devices

Though the sizes of laptops and mobile phones have become smaller and lighter over the years, that of power adapters have pretty much remained the same. They are still the same device we have always known them to be; bulky, messy and hard-to-carry-around. But the new GaNtechnology seeks...

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Three-phase, 1.25-kW, 200-VAC small form factor GaN inverter reference design for integrated drives
Motor

Three-phase, 1.25-kW, 200-VAC small form factor GaN inverter reference design for integrated drives

This reference design is a three-phase inverter with a continuous power rating of 1.25 kW at 50°C ambient and 550 W at 85°C ambient for driving 200-V AC servo motors. It features 600-V LMG3411R150 Gallium Nitride (GaN) power modules with an integrated FET and gate driver mounted on an...

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Energy-efficient power electronics – gallium oxide power transistors with record values
Science

Energy-efficient power electronics – gallium oxide power transistors with record values

The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current...

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ON Semiconductor NCP51820 half-bridge gate driver
IC

ON Semiconductor NCP51820 half-bridge gate driver

The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode. The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode (e-mode) and gate injection transistor (GIT) GaN HEMT power switches in...

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Infineon Gallium Nitride Power Devices
IC

Infineon Gallium Nitride Power Devices

Infineon adds GaN (Gallium Nitride) to its power portfolio: CoolGaN™ and GaN EiceDRIVER™ ICs. The next essential step towards an energy-efficient world lies in the use of new materials and technologies. Wide bandgap semiconductors enable greater power efficiency, smaller...

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