World’s smallest and most affordable 65W GaN Adapter for Laptops and Mobile Devices
Power

World’s smallest and most affordable 65W GaN Adapter for Laptops and Mobile Devices

Though the sizes of laptops and mobile phones have become smaller and lighter over the years, that of power adapters have pretty much remained the same. They are still the same device we have always known them to be; bulky, messy and hard-to-carry-around. But the new GaNtechnology seeks...

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Three-phase, 1.25-kW, 200-VAC small form factor GaN inverter reference design for integrated drives
Motor

Three-phase, 1.25-kW, 200-VAC small form factor GaN inverter reference design for integrated drives

This reference design is a three-phase inverter with a continuous power rating of 1.25 kW at 50°C ambient and 550 W at 85°C ambient for driving 200-V AC servo motors. It features 600-V LMG3411R150 Gallium Nitride (GaN) power modules with an integrated FET and gate driver mounted on an...

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Energy-efficient power electronics – gallium oxide power transistors with record values
Science

Energy-efficient power electronics – gallium oxide power transistors with record values

The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current...

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ON Semiconductor NCP51820 half-bridge gate driver
IC

ON Semiconductor NCP51820 half-bridge gate driver

The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode. The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode (e-mode) and gate injection transistor (GIT) GaN HEMT power switches in...

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Infineon Gallium Nitride Power Devices
IC

Infineon Gallium Nitride Power Devices

Infineon adds GaN (Gallium Nitride) to its power portfolio: CoolGaN™ and GaN EiceDRIVER™ ICs. The next essential step towards an energy-efficient world lies in the use of new materials and technologies. Wide bandgap semiconductors enable greater power efficiency, smaller...

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1kW bidirectional DC-DC converter with credit card footprint
Power

1kW bidirectional DC-DC converter with credit card footprint

Diamond Electric in Japan has designed a 1kW isolated bidirectional DC-DC converter (IBDC) inverter using gallium nitride (GaN) devices that is the size of a credit card. by Nick Flaherty @ eenewseurope.com: The technology can substantially reduce the weight and size of DC-DC...

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GaN FETs step up performance, cut package footprint
Parts

GaN FETs step up performance, cut package footprint

by Graham Prophet @ edn-europe.com: Representing a step forward in performance and cost, the latest eGaN (gallium nitride) power FETs from Efficient Power Conversion (EPC), EPC2045 and EPC2047, are half the size of prior generation eGaN transistors with significantly higher...

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650V, 100A GaN transistors on show
Parts

650V, 100A GaN transistors on show

by Graham Prophet @ edn-europe.com: GaN Systems (Ottawa, Canada) is to display its GS66540C 650V 100A high current GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE Europe (CERN, Geneva, September 8th – 10th...

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