Marktech reflective sensors feature 0.5-1.5mm short detection distance
https://www.electronics-lab.com/marktech-reflective-sensors-feature-0-5-1-5mm-short-detection-distance/
Marktech Optoelectronics has announced the expansion of its surface-mount family of SWIR reflective sensors. The sensors are suitable for position sensing and detection applications, including card, barcode, edge sensing and money bill readers. Marktech surface-mount SWIR reflective sensors combine both a short wavelength infrared emitter and a high-sensitivity InGaAs photodiode. Emitted light from the sensor […]
InGaAs image sensor detects short-wavelength-IR up to 2.55µm
https://www.electronics-lab.com/ingaas-image-sensor-detects-short-wavelength-ir-2-55%c2%b5m/
Hamamatsu Photonics has developed an InGaAs area image sensor for hyperspectral cameras capable of detecting short-wavelength-infrared light up to 2.55 µm which is the world’s longest wavelength detectable by this type of area image sensor. By applying compound opto-semiconductor manufacturing technology fostered in-house over many years, we designed and developed a new area image sensor […]
InGaAs TFET, a potential alternative to MOSFET in future ultralow power chips
https://www.electronics-lab.com/ingaas-tfet-potential-alternative-mosfet-future-ultralow-power-chips/
by Graham Prophet @ edn-europe.com: Belgian researchers from imec, at a conference** dedicated to compound semiconductor technology, are to present promising device results with a InGaAs-only TFET (tunnel field-effect transistor) that achieves a sub-60 mV/decade sub-threshold swing at room temperature. InGaAs TFET, a potential alternative to MOSFET in future ultralow power chips – [Link]