InGaAs TFET, a potential alternative to MOSFET in future ultralow power chips
by Graham Prophet @ edn-europe.com:
Belgian researchers from imec, at a conference** dedicated to compound semiconductor technology, are to present promising device results with a InGaAs-only TFET (tunnel field-effect transistor) that achieves a sub-60 mV/decade sub-threshold swing at room temperature.
InGaAs TFET, a potential alternative to MOSFET in future ultralow power chips – [Link]
Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)
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