STMicroelectronics STPSC8H065 is a silicon carbide power Schottky diode

https://www.electronics-lab.com/stmicroelectronics-stpsc8h065-silicon-carbide-power-schottky-diode/

STPSC8H065 – 650 V, 8 A high surge silicon carbide power Schottky diode This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to […]