STMicroelectronics STPSC8H065 is a silicon carbide power Schottky diode

STPSC8H065 – 650 V, 8 A high surge silicon carbide power Schottky diode

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

The STPSC8H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key features

• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• High forward surge capability
• Insulated package TO-220AC Ins:
  • Insulated voltage: 2500 VRMS
  • Typical package capacitance: 7 pF
• Power efficient product
• ECOPACK^®2 compliant component

Applications

• Switch mode power supply
• PFC
• DCDC converters
• LLC topologies
• Boost diode

more information: www.st.com

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