Everspin’s UNISYST MRAM Combines Code and Data Storage for Embedded Systems

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https://www.electronics-lab.com/everspins-unisyst-mram-combines-code-and-data-storage-for-embedded-systems/

The new UNISYST MRAM family unifies code and data storage in a single device, offering up to 2 Gb density, 400 MB/s reads, and a migration path from its existing PERSYST platform.

Everspin Releases High-Reliability MRAM Devices Targeting Extreme Environments

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https://www.electronics-lab.com/everspin-releases-high-reliability-mram-devices-targeting-extreme-environments/

The new devices deliver AEC-Q100 Grade 1 qualification and 10-year data retention at 125°C for mission-critical systems in industrial, aerospace, and automotive industries.

Current bending yields low-power magnetic memory

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https://www.electronics-lab.com/current-bending-yields-low-power-magnetic-memory/

by Harry Baggen @ elektormagazine.com: Magnetic random-access memory (MRAM) is faster, more efficient and more robust than other data storage media. MRAM stores data by making clever use of electron spin – a sort of gyroscopic property of electrons. Because it used magnetism instead of stored charge, MRAM is nonvolatile, which means that the stored data […]