RRH47000 NDIR CO₂ Sensor Module is Efficient and Reliable
https://www.electronics-lab.com/rrh47000-ndir-co%e2%82%82-sensor-module-is-efficient-and-reliable/
Maintaining optimal air quality is very important in industrial and commercial environments to ensure productivity, well-being, and safety. Renesas Electronics recently introduced the RRH47000 NDIR CO₂ Sensor Module, which addresses these needs with precision and reliability. This advanced sensor offers accurate CO₂ measurements, humidity and temperature sensing, and robust long-term performance, which makes it an […]
Arduino introduces UNO R4 Boards with expanded capabilities and powerful CPU
https://www.electronics-lab.com/arduino-introduces-uno-r4-boards-with-expanded-capabilities-and-powerful-cpu/
Arduino announced the release of the Arduino UNO R4 back in March of this year, which brought new hardware platforms for the maker community. Building upon the popular UNO footprint, Arduino gave the R4 a complete hardware refresh, making it a must-have for embedded developers and beginners. While the UNO R4 retains the unevenly-spaced pin […]
Renesas expands the RZ/V series of microprocessors for improved machine vision AI applications
https://www.electronics-lab.com/renesas-expands-the-rz-v-series-of-microprocessors-for-improved-machine-vision-ai-applications/
Recently, Renesas Electronics Corporation expanded its existing RZ/V family of microprocessors to add a new device that enables AI processing of image data from multiple cameras. This data process offers improved accuracy of image recognition for machine vision AI applications. The new hardware platform, RZ/V2MA microprocessor, is equipped with two 64-bit Arm Cortex cores and […]
Renesas Electronics Achieves Lowest Embedded SRAM Power of 13.7 nW/Mbit
https://www.electronics-lab.com/renesas-electronics-achieves-lowest-embedded-sram-power-13-7-nwmbit/
Renesas Electronics Corporation announced the successful development of a new low-power SRAM circuit technology that achieves a record ultra-low power consumption of 13.7 nW/Mbit in standby mode. The prototype SRAM also achieves a high-speed readout time of 1.8 ns during active operation. Renesas Electronics applied its 65nm node silicon on thin buried oxide (SOTB) process to develop this […]