2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs with low power usage

2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs with low power usage

Alliance Memory 2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs Offer Low Power Consumption to Increase Battery Life in Mobile Electronics; Devices Combine Low-Voltage Operation of 1.1V With Fast Clock Speeds of 1.6GHz for increased Efficiency and Performance

The 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN provide lower power consumption and faster speeds than the previous-generation LPDDR3 SDRAMs. The devices are available in 200-ball FBGA packages.

The devices offer low-voltage operation of 1.1V/1.8V to prolong battery life in portable electronics for the consumer and industrial markets. For higher efficiency for advanced audio and high-resolution video in embedded applications, the LPDDR4 SDRAMs provide clock speeds of up to 1.6GHz for high transfer rates of 3.2Gbps. For automotive applications, the AEC-Q100 qualified products can operate over an extended temperature range of -40°C to +105°C.

The LPDDR4 SDRAMs are organized as 1 channel (AS4C128M16MD4-062BAN and AS4C256M16MD4-062BAN) and 2 channels (AS4C128M32MD4-062BAN and AS4C256M32MD4-062BAN) per device. Individual channels consist of eight banks of 16 bits. The components feature fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An integrated temperature sensor controls the self-refresh rate.

Alliance Memory’s LPDDR4 SDRAMs have been developed to provide a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification.

Key Specifications and Benefits:

  • On-chip ECC
  • AEC-Q100 qualified
  • Low-voltage operation of 1.1V/1.8V
  • Fast clock speeds of 1.6GHz
  • Extremely high transfer rates of 3.2Gbps
  • Automotive A2 Grade, temperature range -40°C to +105°C
  • Eight internal banks per channel
  • x32 for 2-channels per device (AS4C128M32MD4, AS4C256M32MD4)
  • x16 for 1-channel per device (AS4C128M16MD4, AS4C256M16MD4)
  • Programmable read and write latencies
  • Programmable and on-the-fly burst lengths (16 and 32)
  • Selectable output drive strength
  • On-chip temperature sensor to control self-refresh rate
  • Offered in the 200-ball FBGA package

Samples and production quantities of the new LPDDR4 SDRAMs are available now, with lead times of eight weeks.

More information: www.alliancememory.com

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Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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