SGT120R65AL – 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

SGT120R65AL – 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

  • Enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Kelvin source pad for optimum gate driving
  • Zero reverse recovery charge

more information: https://www.st.com/en/power-transistors/sgt120r65al.html

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About mixos

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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