TA9410E RF GaN Transistor is ideal for radio applications
Parts

TA9410E RF GaN Transistor is ideal for radio applications

Tagore’s transistor is ideal for radio applications such as public safety radios and EW radios. Tagore's TA9410E is a broadband 50 V, 25 W GaN transistor capable of operating from 20 M to 3 GHz. Using a simple input/output match, it can be tuned for various bands of interest....

Continue Reading
1167
Views
0 Comments
3D printed liquid cooled heatsinks cool down TO-247 transistors
PartsTop Stories

3D printed liquid cooled heatsinks cool down TO-247 transistors

Standard Transistor Cooler Made by 3D-printing using SLM (Selective Laser Melting) A very effective way to dissipate the high heat flux densities of electronic power modules or power devices with high power density is the use of micro-coolers or micro-channel heat sinks made by SML....

Continue Reading
1194
Views
0 Comments
AspenCore Book Highlights GaN’s role for the New Power Electronics World
Books

AspenCore Book Highlights GaN’s role for the New Power Electronics World

Why Wide BandGap (WBG), and why GaN specifically? AspenCore Media’s new book, the “AspenCore Guide to Gallium Nitride: A New Era for Power Electronics,” answers those questions and more. WBG power semiconductor devices in silicon carbide and GaN technology provide design...

Continue Reading
1345
Views
0 Comments
EPC2218 Enhancement-Mode GaN Power Transistors
Parts

EPC2218 Enhancement-Mode GaN Power Transistors

EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with...

Continue Reading
1049
Views
0 Comments
First Bizen quantum tunnelling transistors launched
Parts

First Bizen quantum tunnelling transistors launched

A UK startup is to ship its first 1200V power devices using a new silicon architecture called Bizen that fits into TO247 or TO263 packages. by Nick Flaherty @ eenewseurope.com The first devices to use the Bizen process technology include three parts rated at 1200V/75A, 900V/75A and...

Continue Reading
1589
Views
0 Comments
Single-atom transistor ‘recipe’ simplifies atomic-scale fabrication
Science

Single-atom transistor ‘recipe’ simplifies atomic-scale fabrication

Researchers at the National Institute of Standards and Technology (NIST) and the University of Maryland say they have developed a step-by-step recipe to produce single-atom transistors. by Rich Pell @ smart2zero.com Transistors consisting of only several-atom clusters or even single...

Continue Reading
1887
Views
0 Comments
CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications
Parts

CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications

Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of...

Continue Reading
1787
Views
0 Comments
GaO beats SiC in channel mobility
Science

GaO beats SiC in channel mobility

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide...

Continue Reading
1653
Views
0 Comments
Archives