GeneSiC Semiconductor 3300V SiC MOSFETs
Parts

GeneSiC Semiconductor 3300V SiC MOSFETs

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal...

Continue Reading
513
Views
0 Comments
EPC2216 – 15 V GaN Power Transistor
Parts

EPC2216 – 15 V GaN Power Transistor

The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A. Specifications Configuration: Single...

Continue Reading
553
Views
0 Comments
Rodriguez – The World’s Slowest IV Tracer
Test/Measurements

Rodriguez – The World’s Slowest IV Tracer

Joseph Eoff has posted on Hackaday details about Rodriguez, which is an IV tracer. About the origin of the project, he says: “Rodriguez started as a nameless project I used to make a point in an online discussion about the shape of the current/voltage plot of the base/emitter...

Continue Reading
1.167
Views
0 Comments
TA9410E RF GaN Transistor is ideal for radio applications
Parts

TA9410E RF GaN Transistor is ideal for radio applications

Tagore’s transistor is ideal for radio applications such as public safety radios and EW radios. Tagore's TA9410E is a broadband 50 V, 25 W GaN transistor capable of operating from 20 M to 3 GHz. Using a simple input/output match, it can be tuned for various bands of interest....

Continue Reading
1.348
Views
0 Comments
3D printed liquid cooled heatsinks cool down TO-247 transistors
PartsTop Stories

3D printed liquid cooled heatsinks cool down TO-247 transistors

Standard Transistor Cooler Made by 3D-printing using SLM (Selective Laser Melting) A very effective way to dissipate the high heat flux densities of electronic power modules or power devices with high power density is the use of micro-coolers or micro-channel heat sinks made by SML....

Continue Reading
1.582
Views
0 Comments
AspenCore Book Highlights GaN’s role for the New Power Electronics World
Books

AspenCore Book Highlights GaN’s role for the New Power Electronics World

Why Wide BandGap (WBG), and why GaN specifically? AspenCore Media’s new book, the “AspenCore Guide to Gallium Nitride: A New Era for Power Electronics,” answers those questions and more. WBG power semiconductor devices in silicon carbide and GaN technology provide design...

Continue Reading
1.599
Views
0 Comments
EPC2218 Enhancement-Mode GaN Power Transistors
Parts

EPC2218 Enhancement-Mode GaN Power Transistors

EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with...

Continue Reading
1.405
Views
0 Comments
First Bizen quantum tunnelling transistors launched
Parts

First Bizen quantum tunnelling transistors launched

A UK startup is to ship its first 1200V power devices using a new silicon architecture called Bizen that fits into TO247 or TO263 packages. by Nick Flaherty @ eenewseurope.com The first devices to use the Bizen process technology include three parts rated at 1200V/75A, 900V/75A and...

Continue Reading
1.863
Views
0 Comments
Archives