Single-atom transistor ‘recipe’ simplifies atomic-scale fabrication
Science

Single-atom transistor ‘recipe’ simplifies atomic-scale fabrication

Researchers at the National Institute of Standards and Technology (NIST) and the University of Maryland say they have developed a step-by-step recipe to produce single-atom transistors. by Rich Pell @ smart2zero.com Transistors consisting of only several-atom clusters or even single...

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CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications
Parts

CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications

Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of...

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GaO beats SiC in channel mobility
Science

GaO beats SiC in channel mobility

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide...

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Designing in MOSFETs for safe and reliable gate-drive operation
Basic Electronics

Designing in MOSFETs for safe and reliable gate-drive operation

The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source...

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7mΩ SiC FETs deliver better performance, improved efficiency and lower losses
Parts

7mΩ SiC FETs deliver better performance, improved efficiency and lower losses

With an RDS(on) of just 7 mΩ, the new SiC-FETs from UnitedSiC are designed for high performance switching in high power applications such as motor control in the automotive sector or for DC/DC converters and vehicle chargers . Based on a unique cascode configuration, the UF3C/UF3SC...

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High speed switching N-channel MOSFET for general purpose
Parts

High speed switching N-channel MOSFET for general purpose

Torex Semiconductor has launched its new XP231N0201TR (30V withstand voltage) for MOSFETs. The product is a general-purpose N-channel MOSFET with low on resistance and high speed switching. It can be used for various applications such as relay circuits and switching circuits. The gate...

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Nexperia Bipolar Transistors
Parts

Nexperia Bipolar Transistors

Bipolar transistors in LFPAK56 – the true power package for smart efficiency These high-power bipolar transistors, housed in LFPAK56 (Power-SO8) packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable, energy-efficient performance,...

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Engineers produce smallest 3-D transistor yet
Science

Engineers produce smallest 3-D transistor yet

Process that modifies semiconductor material atom by atom could enable higher-performance electronics. Researchers from MIT and the University of Colorado have fabricated a 3-D transistor that’s less than half the size of today’s smallest commercial models. To do so, they developed...

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