Kioxia Samples UFS 5.0 NAND With 10.8GB/s for Flagships

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https://www.electronics-lab.com/kioxia-samples-ufs-5-0-nand-with-10-8gb-s-for-flagships/

Featuring 8th-gen BiCS FLASH and a custom controller, Kioxia’s UFS 5.0 delivers up to 10.8GB/s, targeting AI-driven smartphones with 512GB and 1TB options.

KIOXIA unveils fifth-generation BiCS FLASH

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https://www.electronics-lab.com/kioxia-unveils-fifth-generation-bics-flash/

New generation 3D flash memory adds layers, boosts capacity, broader bandwidth and provides new design flexibility KIOXIA Europe GmbH, the world leader in memory solutions, today announced that it has successfully developed its fifth-generation BiCS FLASH three-dimensional (3D) flash memory with a 112-layer vertically stacked structure. KIOXIA plans to start shipping samples of the new […]

96-layer BiCS FLASH prototype from Toshiba uses QLC technology

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https://www.electronics-lab.com/96-layer-bics-flash-prototype-from-toshiba-uses-qlc-technology/

Toshiba Memory Europe has developed a prototype sample of a 96-layer BiCS FLASH, memory device using its proprietary 3D flash quad level cell (QLC) technology, claimed to boost single-chip memory capacity to the highest level yet achieved. QLC technology increases the bit count for data per memory cell from three to four, “significantly expanding capacity” […]

Toshiba launches 256-Gbit 48-layer 3-D NAND flash

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https://www.electronics-lab.com/toshiba-launches-256-gbit-48-layer-3-d-nand-flash/

by Susan Nordyk @ edn.com: Ready for sampling in September, Toshiba’s 48-layer BiCS (Bit Cost Scalable) flash memory stores 256 Gbits using a 3-D vertically stacked cell structure and 3-bit-per-cell triple-level cell technology. By employing this 48-layer vertical stacking process, BiCS flash surpasses the capacity of conventional 2-D NAND flash memory, where cells are arrayed […]