Ready for sampling in September, Toshiba’s 48-layer BiCS (Bit Cost Scalable) flash memory stores 256 Gbits using a 3-D vertically stacked cell structure and 3-bit-per-cell triple-level cell technology. By employing this 48-layer vertical stacking process, BiCS flash surpasses the capacity of conventional 2-D NAND flash memory, where cells are arrayed in a planar direction on a silicon plane.
BiCS also enhances write/erase reliability endurance and boosts write speeds. The 256-Gbit (32-Gbyte) device can be used in a myriad of applications, including consumer solid-state drives, smart phones, tablets, memory cards, and enterprise SSDs for data centers.
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