GaO beats SiC in channel mobility
Science

GaO beats SiC in channel mobility

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide...

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Energy-efficient power electronics – gallium oxide power transistors with record values
Science

Energy-efficient power electronics – gallium oxide power transistors with record values

The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current...

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