GaO beats SiC in channel mobility

---

https://www.electronics-lab.com/gao-beats-sic-channel-mobility/

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide (α-Ga2O3) as a power semiconductor. The company said it has achieved a channel mobility of 72cm2/Vs  in […]

Energy-efficient power electronics – gallium oxide power transistors with record values

---

https://www.electronics-lab.com/energy-efficient-power-electronics-gallium-oxide-power-transistors-record-values/

The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current conductivity. With a breakdown voltage of 1.8KV and a record power density of 155 megawatts per […]