GaO beats SiC in channel mobility

GaO beats SiC in channel mobility

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration.

Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide (α-Ga2O3) as a power semiconductor. The company said it has achieved a channel mobility of 72cm2/Vs  in normal-off operation which it compares to 30cm2/Vs for silicon-carbide.

Whereas other power semiconductors may need the power to be applied to turn-off the transistor having a technology that turns off when no voltage is applied to the gate is an important characteristic of power transistors for safe and secure electrical systems.

Flosfia calculated the characteristic on-resistance of GaO MOSFETs with a withstand voltage of 600V to 1200V by device simulation and found that the on-resistance was approximately 50 percent or less that of commercially available SiC.

Flosfia has signed an agreement with Hakuto and Kyoei Sangyo for these two companies to handle corundum-type gallium oxide power devices as domestic distributors.


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Mike is the founder and editor of, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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