MasterGaN6 Power IC Integrates 650 V GaN Half-Bridge With High-Voltage Driver
https://www.electronics-lab.com/mastergan6-power-ic-integrates-650-v-gan-half-bridge-with-high-voltage-driver/
STMicroelectronics kicks off the second generation of its MasterGaN half-bridge family with the MasterGaN6 power system-in-package, designed for industrial and commercial power applications.
Cambridge GaN devices launched second series of its ICeGaN 650 V Gallium Nitride HEMT family
https://www.electronics-lab.com/cambridge-gan-devices-launched-second-series-of-its-icegan-650-v-gallium-nitride-hemt-family/
Second series of ICeGaN 650 V Gallium Nitride HEMT family deliver best-in-class robustness, Ease-Of-Use & high efficiency Cambridge GaN Devices launched the second series of its ICeGaN 650 V gallium nitride HEMT family, delivering industry-leading robustness, ease-of-use and maximised efficiency. H2 Series ICeGaN HEMTs employ CGD’s smart gate interface that virtually eliminates typical e-mode GaN […]
Innoscience : We’ve Got GaN
https://www.electronics-lab.com/innoscience-weve-got-gan/
GaN power switching technology has been around for many years. By now, many design engineers are familiar with the technology and have redesigned their products to take advantage of GaN power devices’ key features such as fast switching, zero reverse recovery current, etc… By using GaN power devices engineers can create products that are much […]
Innergie, a Delta Electronics Brand, Launches C6 Adapter with GaN Technology
https://www.electronics-lab.com/innergie-a-delta-electronics-brand-launches-c6-adapter-with-gan-technology/
Innergie, a consumer power brand of Delta that won several international certifications and awards, today announced the launch of the C6 60 W USB-C adapter for Innergie’s flagship “One For All” Series. The latest C6 adapter takes advantage of Gallium Nitride (GaN) technology and boosts charging efficiency for consumers by up to 91.5%. The new […]
GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET
https://www.electronics-lab.com/gan039-650ntb-is-a-650-v-33-mohm-gallium-nitride-gan-fet/
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Features & benefits Simplified driver design as standard level MOSFET gate drivers can […]
GaN Systems GS-065-060-3 650V Enhancement Mode GaN Transistor
https://www.electronics-lab.com/gan-systems-gs-065-060-3-650v-enhancement-mode-gan-transistor/
GaN Systems GS-065-060-3 650V Enhancement Mode GaN (Gallium Nitride) Transistor is a power transistor optimized for high current, high voltage breakdown, and high switching frequency. The GS-065-060-3 features an Island Technology® cell layout, reducing the size of the device while transferring substantially more current using on-chip metal. GaNPX® packaging enables low inductance and low thermal resistance […]
HDPLEX 250W is the World’s Smallest Fanless ATX Power Supply Unit
https://www.electronics-lab.com/hdplex-250w-is-the-worlds-smallest-fanless-atx-power-supply-unit/
HDPLEX company which is known for its fan-less and compact PCs, reveals its passive GaN AIO (All-In-One) ATX PSU ( Advanced Technology eXtended Power Supply) with an output power of 250W. It makes use of the cutting-edge GaN (Gallium Nitride) technology that can be found in some tiny USB-C power supplies. This compact PSU measures […]
EPC9160 Synchronous Buck Converter Reference Design
https://www.electronics-lab.com/epc9160-synchronous-buck-converter-reference-design/
EPC’s EPC9160 9 V to 24 V to dual output 5 V/3.3 V synchronous buck converter reference design EPC’s EPC9160 is a 9 V to 24 V to dual output 5 V/3.3 V, 15 A synchronous buck converter operating at 2 MHz switching frequency. The EPC9160 features the EPC2055 GaN FET and LTC7890 two-phase analog […]
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
https://www.electronics-lab.com/teledyne-e2v-hirel-announces-new-100-v-high-speed-20-mhz-fet-and-gan-transistor-driver-flip-chip-die/
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules and space motor drives. The TD99102 is an […]
All-silicon reference design covers 45-W fast charging circuit
https://www.electronics-lab.com/all-silicon-reference-design-covers-45-w-fast-charging-circuit/
Silanna Semiconductor has further expanded its family of silicon- and GaN-based fast charger reference designs with an all-silicon option that will significantly reduce the time needed to develop high-density 45W applications. Supplied as a fully production-ready solution, the new RD-24 design provides everything needed to rapidly prototype and test a fully functional 45W 1C charger. […]