Energy-efficient power electronics – gallium oxide power transistors with record values
Science

Energy-efficient power electronics – gallium oxide power transistors with record values

The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current...

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Dual Channel SiC MOSFET Gate Driver Reference Design
Miscellaneous

Dual Channel SiC MOSFET Gate Driver Reference Design

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and...

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BUK9J0R9-40H – A Super Junction MOSFET with Low On-State Resistance
Parts

BUK9J0R9-40H – A Super Junction MOSFET with Low On-State Resistance

A MOSFET known as a metal-oxide-semiconductor-field-effect transistor is a special type of field-effect transistor which has an insulated gate where in this case the voltage determines the conductivity of the device. Just like conventional transistors, they are also used for switching and...

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