New N-Channel MOSFET with Maximum Power Dissipation of 0.5W

New N-Channel MOSFET with Maximum Power Dissipation of 0.5W

Compact N-Channel 30V MOSFET from Vishay in Stock at TTI

TTI, Inc., a leading specialty distributor of electronic components, has stock for immediate shipment of Vishay’s TrenchFET® Si1308EDL 30V N-Channel MOSFET in the compact SOT-323/SC-70 surface mount package. The three-leaded SC-70 package measures 2.0mm x 2.1mm and has a continuous drain current of 1.4A. Applications include DC/DC converters, boost converters and load switches. Maximum power dissipation of the Si1308EDL is 0.5W. Drain-source on-state resistance is a very low 0.110 ohms and total gate charge is 2.7nC.

For more information, visit Vishay Si1308EDL 30V N-Channel MOSFET at TTI.

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Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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