New N-Channel MOSFET with Maximum Power Dissipation of 0.5W

New N-Channel MOSFET with Maximum Power Dissipation of 0.5W

Compact N-Channel 30V MOSFET from Vishay in Stock at TTI

TTI, Inc., a leading specialty distributor of electronic components, has stock for immediate shipment of Vishay’s TrenchFET® Si1308EDL 30V N-Channel MOSFET in the compact SOT-323/SC-70 surface mount package. The three-leaded SC-70 package measures 2.0mm x 2.1mm and has a continuous drain current of 1.4A. Applications include DC/DC converters, boost converters and load switches. Maximum power dissipation of the Si1308EDL is 0.5W. Drain-source on-state resistance is a very low 0.110 ohms and total gate charge is 2.7nC.

For more information, visit Vishay Si1308EDL 30V N-Channel MOSFET at TTI.

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